Pattern formation in metallic glasses induced by helium-ion implantation. II. Model

1983 ◽  
Vol 28 (10) ◽  
pp. 5692-5694 ◽  
Author(s):  
I. Lovas ◽  
T. Tél
Keyword(s):  
Pattern Formation ◽  
Ion Implantation ◽  
Metallic Glasses ◽  
Helium Ion

Pattern formation in metallic glasses induced by helium-ion implanation. I. Experiments

1983 ◽  
Vol 28 (10) ◽  
pp. 5688-5691 ◽  
Author(s):  
F. Pászti ◽  
M. Fried ◽  
L. Pogány ◽  
A. Manuaba ◽  
G. Mezey ◽  
...  
Keyword(s):  
Pattern Formation ◽  
Metallic Glasses ◽  
Helium Ion ◽  
Ion Implanation

Membrane folding by helium ion implantation for three-dimensional device fabrication

2007 ◽  
Vol 25 (6) ◽  
pp. 2184 ◽  
Author(s):  
William J. Arora ◽  
Sybren Sijbrandij ◽  
Lewis Stern ◽  
John Notte ◽  
Henry I. Smith ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Device Fabrication ◽  
Helium Ion

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Microstructure of electrodeposited tungsten coatings after 30 keV helium ion implantation

2019 ◽  
Vol 144 ◽  
pp. 164-171
Author(s):  
Ningbo Sun ◽  
Shaoting Lang ◽  
Yingchun Zhang
Keyword(s):  
Ion Implantation ◽  
Helium Ion

Irradiation hardening of pure vanadium and vanadium alloys due to helium ion implantation and displacement damage

2020 ◽  
Vol 540 ◽  
pp. 152381
Author(s):  
Yitao Yang ◽  
Tingxing Yan ◽  
Chonghong Zhang ◽  
Xin Fu ◽  
Tongda Ma ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Displacement Damage ◽  
Vanadium Alloys ◽  
Irradiation Hardening ◽  
Helium Ion

scholarly journals Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

2016 ◽  
Vol 383 ◽  
pp. 38-46 ◽  
Author(s):  
Lucile Pentecoste ◽  
Anne-Lise Thomann ◽  
Amer Melhem ◽  
Amael Caillard ◽  
Stéphane Cuynet ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Low Energy ◽  
Helium Ion

In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides

2006 ◽  
Vol 18 (17) ◽  
pp. 1882-1884 ◽  
Author(s):  
Y. Liu ◽  
C.W. Cho ◽  
W.Y. Cheung ◽  
H.K. Tsang
Keyword(s):  
Ion Implantation ◽  
Silicon On Insulator ◽  
Channel Power ◽  
Helium Ion
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