Core- and valence-band energy-level shifts in small two-dimensional islands of gold deposited on Pt(100): The effect of step-edge, surface, and bulk atoms

1983 ◽  
Vol 28 (2) ◽  
pp. 1158-1160 ◽  
Author(s):  
M. Salmerón ◽  
S. Ferrer ◽  
M. Jazzar ◽  
G. A. Somorjai
Keyword(s):  
Energy Level ◽  
Valence Band ◽  
Step Edge ◽  
Two Dimensional ◽  
Band Energy ◽  
Level Shifts ◽  
Edge Surface ◽  
Valence Band Energy

Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric Pmos Devices with Poly-Si1−Gex Gate Material

1999 ◽  
Vol 567 ◽  
Author(s):  
A. Shanware ◽  
H. Z. Massoud ◽  
A. Acker ◽  
V. Z. Q. Li ◽  
M. R. Mirabedini ◽  
...  
Keyword(s):  
Energy Level ◽  
Valence Band ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Tunneling Current ◽  
Current Drive ◽  
Future Generations ◽  
Band Energy ◽  
Flatband Voltage ◽  
Valence Band Energy

ABSTRACTThe performance of CMOS devices improves due to the addition of Ge in their poly-Si gate material. The presence of Ge in the gate increases the current drive due to the reduction of the flatband voltage. The change in the flatband voltage is due to a shift in the valence-band energy level in the gate. This shift results in a change in the barrier height for electrons tunneling from the gate. Thus, the presence of Ge in the gate increases the tunneling current in the gate. This increase may result in a limitation in the use of SiGe gates in future generations of MOSFETs with ultrathin gate dielectrics. The purpose of this work is to investigate the effect of Ge content on the tunneling current in CMOS devices with ultrathin gate dielectrics.

Valence-band energy-momentum densities of amorphousSiO2by(e,2e)spectroscopy

1998 ◽  
Vol 57 (8) ◽  
pp. 4349-4357 ◽  
Author(s):  
Z. Fang ◽  
X. Guo ◽  
S. A. Canney ◽  
S. Utteridge ◽  
M. J. Ford ◽  
...  
Keyword(s):  
Valence Band ◽  
Band Energy ◽  
Valence Band Energy

scholarly journals Valence band energy spectrum of HgTe quantum wells with an inverted band structure

2017 ◽  
Vol 96 (3) ◽  
Author(s):  
G. M. Minkov ◽  
V. Ya. Aleshkin ◽  
O. E. Rut ◽  
A. A. Sherstobitov ◽  
A. V. Germanenko ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Band Energy ◽  
Valence Band Energy

scholarly journals Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

2012 ◽  
Vol 85 (20) ◽  
Author(s):  
James T. Teherani ◽  
Winston Chern ◽  
Dimitri A. Antoniadis ◽  
Judy L. Hoyt ◽  
Liliana Ruiz ◽  
...  
Keyword(s):  
Valence Band ◽  
Type Ii ◽  
Strained Si ◽  
Band Energy ◽  
Valence Band Energy

Γ-Point Valence-Band Energy Levels in CdS Determined from Excited States ofA- andB-Band Excitons

1972 ◽  
Vol 6 (6) ◽  
pp. 2269-2273 ◽  
Author(s):  
C. W. Litton ◽  
D. C. Reynolds ◽  
T. C. Collins
Keyword(s):  
Valence Band ◽  
Excited States ◽  
Energy Levels ◽  
Band Energy ◽  
Valence Band Energy

Valence-band energy spectrum of solid solutions of narrow-gap-semiconductorBi2−xSnxTe3single crystals

1994 ◽  
Vol 50 (23) ◽  
pp. 16921-16930 ◽  
Author(s):  
V. A. Kulbachinskii ◽  
M. Inoue ◽  
M. Sasaki ◽  
H. Negishi ◽  
W. X. Gao ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Valence Band ◽  
Solid Solutions ◽  
Narrow Gap ◽  
Band Energy ◽  
Valence Band Energy

scholarly journals Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

AIP Advances ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 075016 ◽  
Author(s):  
K. Collar ◽  
J. Li ◽  
W. Jiao ◽  
Y. Guan ◽  
M. Losurdo ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Energy ◽  
X Ray ◽  
The Impact ◽  
Valence Band Energy
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