Nonparabolicity corrections to the valence band energy levels of Si/GexSi1-x quantum wells

1995 ◽  
Vol 17 (3) ◽  
pp. 245 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Energy Levels ◽  
Band Energy ◽  
Valence Band Energy

scholarly journals Valence band energy spectrum of HgTe quantum wells with an inverted band structure

2017 ◽  
Vol 96 (3) ◽  
Author(s):  
G. M. Minkov ◽  
V. Ya. Aleshkin ◽  
O. E. Rut ◽  
A. A. Sherstobitov ◽  
A. V. Germanenko ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Band Energy ◽  
Valence Band Energy

Γ-Point Valence-Band Energy Levels in CdS Determined from Excited States ofA- andB-Band Excitons

1972 ◽  
Vol 6 (6) ◽  
pp. 2269-2273 ◽  
Author(s):  
C. W. Litton ◽  
D. C. Reynolds ◽  
T. C. Collins
Keyword(s):  
Valence Band ◽  
Excited States ◽  
Energy Levels ◽  
Band Energy ◽  
Valence Band Energy

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Valence-band energy-momentum densities of amorphousSiO2by(e,2e)spectroscopy

1998 ◽  
Vol 57 (8) ◽  
pp. 4349-4357 ◽  
Author(s):  
Z. Fang ◽  
X. Guo ◽  
S. A. Canney ◽  
S. Utteridge ◽  
M. J. Ford ◽  
...  
Keyword(s):  
Valence Band ◽  
Band Energy ◽  
Valence Band Energy

PHOTOCURRENT ABSORPTION SPECTROSCOPIC STUDY OF Si0.6Ge0.4/Si QUANTUM WELLS

2006 ◽  
Vol 20 (02) ◽  
pp. 133-140
Author(s):  
SHIHUA HUANG ◽  
FENGMIN WU ◽  
JI LIN ◽  
FANG LU
Keyword(s):  
Energy Level ◽  
Spectroscopic Study ◽  
Quantum Wells ◽  
Valence Band ◽  
Ground State ◽  
State Energy ◽  
Energy Levels ◽  
Absorption Coefficients ◽  
Discrete Energy ◽  
Discrete Energy Level

Absorption spectra of Si 0.6 Ge 0.4/ Si quantum wells are characterized by photocurrent measurements. The absorption coefficients of two different transitions, namely the transition between the Si band states and the discrete energy level in quantum wells, and the interlevel transition in quantum wells are deduced. They are directly proportional to (ℏω-ΔE)3/2 and δ(ℏω-Eeh), respectively. The valence band offsets of Si 0.6 Ge 0.4/ Si interface are 297 meV. The ground state energy levels in valence band and conduction band Si 0.6 Ge 0.4/ Si quantum wells are 37 meV and 23 meV, respectively.

scholarly journals Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

2012 ◽  
Vol 85 (20) ◽  
Author(s):  
James T. Teherani ◽  
Winston Chern ◽  
Dimitri A. Antoniadis ◽  
Judy L. Hoyt ◽  
Liliana Ruiz ◽  
...  
Keyword(s):  
Valence Band ◽  
Type Ii ◽  
Strained Si ◽  
Band Energy ◽  
Valence Band Energy

Valence-band energy spectrum of solid solutions of narrow-gap-semiconductorBi2−xSnxTe3single crystals

1994 ◽  
Vol 50 (23) ◽  
pp. 16921-16930 ◽  
Author(s):  
V. A. Kulbachinskii ◽  
M. Inoue ◽  
M. Sasaki ◽  
H. Negishi ◽  
W. X. Gao ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Valence Band ◽  
Solid Solutions ◽  
Narrow Gap ◽  
Band Energy ◽  
Valence Band Energy

scholarly journals Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

AIP Advances ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 075016 ◽  
Author(s):  
K. Collar ◽  
J. Li ◽  
W. Jiao ◽  
Y. Guan ◽  
M. Losurdo ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Energy ◽  
X Ray ◽  
The Impact ◽  
Valence Band Energy
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