scholarly journals Valence band energy spectrum of HgTe quantum wells with an inverted band structure

2017 ◽  
Vol 96 (3) ◽  
Author(s):  
G. M. Minkov ◽  
V. Ya. Aleshkin ◽  
O. E. Rut ◽  
A. A. Sherstobitov ◽  
A. V. Germanenko ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Band Energy ◽  
Valence Band Energy

Valence-band energy spectrum of solid solutions of narrow-gap-semiconductorBi2−xSnxTe3single crystals

1994 ◽  
Vol 50 (23) ◽  
pp. 16921-16930 ◽  
Author(s):  
V. A. Kulbachinskii ◽  
M. Inoue ◽  
M. Sasaki ◽  
H. Negishi ◽  
W. X. Gao ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Valence Band ◽  
Solid Solutions ◽  
Narrow Gap ◽  
Band Energy ◽  
Valence Band Energy

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Valence-band energy-momentum densities of amorphousSiO2by(e,2e)spectroscopy

1998 ◽  
Vol 57 (8) ◽  
pp. 4349-4357 ◽  
Author(s):  
Z. Fang ◽  
X. Guo ◽  
S. A. Canney ◽  
S. Utteridge ◽  
M. J. Ford ◽  
...  
Keyword(s):  
Valence Band ◽  
Band Energy ◽  
Valence Band Energy

Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells

2001 ◽  
Vol 302-303 ◽  
pp. 106-113 ◽  
Author(s):  
S.C.P Rodrigues ◽  
G.M Sipahi ◽  
L.M.R Scolfaro ◽  
J.R Leite
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Valence Band Structure ◽  
Cubic Gan

The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

2009 ◽  
Vol 41 (9) ◽  
pp. 1656-1660 ◽  
Author(s):  
Shudong Wu ◽  
Zhi Huang ◽  
Yuan Liu ◽  
Qiufeng Huang ◽  
Wang Guo ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Optical Gain ◽  
Valence Band Structure

Valence band structure of very narrow InGaAs/InP quantum wells

1996 ◽  
Vol 98 (4) ◽  
pp. 297-301 ◽  
Author(s):  
F. Dujardin ◽  
N. Marréaud ◽  
J.P. Laurenti
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Valence Band Structure
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