Ranges of low-energy, light ions in amorphous silicon

1983 ◽  
Vol 27 (6) ◽  
pp. 3528-3537 ◽  
Author(s):  
W. Wach ◽  
K. Wittmaack
Keyword(s):  
Amorphous Silicon ◽  
Low Energy ◽  
Light Ions

Angular, energy and charge distribution in the scattering of low-energy helium ions by an amorphous silicon surface

1998 ◽  
Vol 10 (4) ◽  
pp. 741-752 ◽  
Author(s):  
B Arezki ◽  
Y Boudouma ◽  
P Benoit-Cattin ◽  
A C Chami ◽  
C Benazeth ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Charge Distribution ◽  
Silicon Surface ◽  
Low Energy ◽  
Helium Ions ◽  
Angular Energy

Kinetics of growth of surface amorphous layers under irradiation of silicon with low-energy light ions

2003 ◽  
Vol 37 (3) ◽  
pp. 340-346 ◽  
Author(s):  
A. I. Titov ◽  
A. Yu. Azarov ◽  
V. S. Belyakov
Keyword(s):  
Low Energy ◽  
Light Ions ◽  
Kinetics Of

The sputtering mechanism for low-energy light ions

1979 ◽  
Vol 18 (4) ◽  
pp. 391-398 ◽  
Author(s):  
R. Behrisch ◽  
G. Maderlechner ◽  
B. M. U. Scherzer ◽  
M. T. Robinson
Keyword(s):  
Low Energy ◽  
Light Ions

Vortex Pinning on Low Energy Light Ions Irradiation

2000 ◽  
pp. 362-364
Author(s):  
T. Satou ◽  
M. Sasase ◽  
S. Okayasu ◽  
K. Hojou
Keyword(s):  
Vortex Pinning ◽  
Low Energy ◽  
Light Ions

Low-Energy, Pulsed-Laser Irradiation of Amorphous Silicon: Melting and Resolidification at Two Fronts

1984 ◽  
Vol 35 ◽  
Author(s):  
W. Sinke ◽  
F.W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Surface Segregation ◽  
Crystalline Silicon ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Low Energy ◽  
Double Peak Structure ◽  
Pulsed Laser Irradiation

ABSTRACTAfter low-energy pulsed-laser irradiation of Cu-implanted silicon, a double-peak structure is observed in the Cu concentration profile, which results from the occurrence of two melts. From Cu surface segregation we calculate the depth of the surface melt. Cu segregation near the position of the amorphous-crystalline interface gives evidence for a self-propagating melt, moving from the surface region towards the crystalline substrate. Measurements of As-redistribution and of sheet resistance as a function of laser energy density in As-implanted silicon are consistent with the crystallization model which is derived from the effects as observed in Cu-implanted silicon.The results imply a large difference in melting temperature, heat conductivity and heat of melting between amorphous silicon and crystalline silicon.

Light-induced creation of defects related to low energy photoluminescence in hydrogenated amorphous silicon

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1064-1067 ◽  
Author(s):  
C. Ogihara ◽  
T. Nomiyama ◽  
H. Yamamoto ◽  
K. Nakanishi ◽  
J. Harada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Low Energy ◽  
Hydrogenated Amorphous
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