scholarly journals Nanometer lithography on silicon and hydrogenated amorphous silicon with low energy electrons

1995 ◽  
Vol 13 (3) ◽  
pp. 805 ◽  
Author(s):  
N. Kramer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Low Energy ◽  
Low Energy Electrons ◽  
Hydrogenated Amorphous

Light-induced creation of defects related to low energy photoluminescence in hydrogenated amorphous silicon

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1064-1067 ◽  
Author(s):  
C. Ogihara ◽  
T. Nomiyama ◽  
H. Yamamoto ◽  
K. Nakanishi ◽  
J. Harada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Low Energy ◽  
Hydrogenated Amorphous

A PHENOMENOLOGICAL STUDY OF THE Si–H INFRARED SPECTRA IN POROUS AND AMORPHOUS SILICON

1999 ◽  
Vol 13 (20) ◽  
pp. 703-708 ◽  
Author(s):  
MANISH KAPOOR ◽  
VIJAY A. SINGH
Keyword(s):  
Amorphous Silicon ◽  
Phenomenological Study ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Peak Shift ◽  
Low Energy ◽  
The Third ◽  
Low Energy Tail ◽  
Hydrogenated Amorphous ◽  
Peak Value

It is observed that Si–H stretching mode vibrational spectra in porous silicon and in hydrogenated amorphous silicon: (i) is broad with a full width at half maxima of ≈20-40 cm -1; (ii) has a long low energy tail; and (iii) has a peak value shifted by 100 cm -1 from 2000 cm -1 (crystalline silicon case) to 2100 cm -1. We propose a simple phenomenological model to account for the above features. The model invokes a narrow distribution in the Si–H bond distances. The first feature namely the broadening can be satisfactorily explained. Although our model yields a low energy tail, it is not as pronounced as the experimental tail. Our model can be shown to be consistent with the third feature, namely the peak shift.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

Sign in / Sign up

Export Citation Format

Share Document