Erratum: Electronic states and total energies in hydrogenated amorphous silicon

1982 ◽  
Vol 26 (6) ◽  
pp. 3474-3474
Author(s):  
Douglas C. Allan ◽  
J. D. Joannopoulos ◽  
William B. Pollard
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Electronic States ◽  
Total Energies ◽  
Hydrogenated Amorphous

Electronic states and total energies in hydrogenated amorphous silicon

1982 ◽  
Vol 25 (2) ◽  
pp. 1065-1080 ◽  
Author(s):  
Douglas C. Allan ◽  
J. D. Joannopoulos ◽  
William B. Pollard
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Electronic States ◽  
Total Energies ◽  
Hydrogenated Amorphous

Doping Mechanism in Tetrahedral Amorphous Carbon

1997 ◽  
Vol 498 ◽  
Author(s):  
C W Chen ◽  
J Robertson
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Carbon ◽  
Hydrogenated Amorphous Silicon ◽  
Donor Atom ◽  
Dangling Bond ◽  
Coulombic Repulsion ◽  
Tetrahedral Amorphous Carbon ◽  
Total Energies ◽  
Doping Mechanism ◽  
Hydrogenated Amorphous

ABSTRACTDoping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

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