Many-body effects in the Si metal-oxide—semiconductor inversion layer: Subband structure

1980 ◽  
Vol 22 (4) ◽  
pp. 1892-1904 ◽  
Author(s):  
K. Nakamura ◽  
H. Ezawa ◽  
K. Watanabe
Keyword(s):  
Metal Oxide ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Many Body ◽  
Many Body Effects ◽  
Subband Structure

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

scholarly journals Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Gem Shoute ◽  
Amir Afshar ◽  
Triratna Muneshwar ◽  
Kenneth Cadien ◽  
Douglas Barlage
Keyword(s):  
Metal Oxide ◽  
Inversion Layer ◽  
Wide Bandgap ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tunnel Current

Noncontact probing of metal‐oxide‐semiconductor inversion layer mobility

1996 ◽  
Vol 69 (12) ◽  
pp. 1779-1780 ◽  
Author(s):  
Joo‐Hiuk Son ◽  
Seongtae Jeong ◽  
Jeffrey Bokor
Keyword(s):  
Metal Oxide ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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