Temperature Dependence of Phonon-Induced Electronic Transitions in Insulating Solids

1970 ◽  
Vol 2 (10) ◽  
pp. 4221-4225 ◽  
Author(s):  
T. P. Martin ◽  
W. Beall Fowler
Keyword(s):  
Temperature Dependence ◽  
Electronic Transitions

Das Temperaturverhalten der Phosphoreszenz und Fluoreszenz von K3CrF6 / The Temperature Dependence of Phosphorescence and Fluorescence in K3CrF6

1973 ◽  
Vol 28 (7) ◽  
pp. 1131-1135
Author(s):  
E. Koglin
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Fluorescence Emission ◽  
Electronic Transitions ◽  
Luminescence Spectra ◽  
Site Symmetry ◽  
Energy Eigenvalues ◽  
Crystal Field Parameters ◽  
Fluorescence And Phosphorescence

The luminescence behaviour of crystalline K3CrF6 is measured in the temperature range from 100 °K to 4.2 °K. The complex shows a very strong, broad fluorescence emission at temperatures lower than 20 °K. additionally also the phosphorescence transition can be observed. At temperatures higher than 20 °K only fluorescence is measured. The 2E→4A2-transition does not split suggesting Oh-site symmetry.Excitation- and luminescence spectra at 4.2 °K are the basis for a calculation of the energy eigenvalues. The crystal field parameters are fitted by the experimental data. The vibrational sidebands of the electronic transitions 2E - 4A2 an 4T24A2 are compared with Raman- and IRresults. From the temperature dependence and measured vibrational frequencies the zero phonon transitions of fluorescence and phosphorescence can be found

Temperature dependence of electronic transitions in MgO, α-Al2O3, and α-SiO2: Final-state effects on phonon coupling

1992 ◽  
Vol 45 (7) ◽  
pp. 3882-3885 ◽  
Author(s):  
W. L. O’Brien ◽  
J. Jia ◽  
Q-Y. Dong ◽  
T. A. Callcott ◽  
D. R. Mueller ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electronic Transitions ◽  
Phonon Coupling ◽  
Final State ◽  
Α Al2o3

IR-Absorption Spectra of Impurities in 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
F. Engelbrecht ◽  
R. Helbig
Keyword(s):  
Temperature Dependence ◽  
Excited States ◽  
Oscillator Strengths ◽  
Electronic Transitions ◽  
Ir Absorption ◽  
Orbit Splitting ◽  
Ir Absorption Spectra ◽  
Nitrogen Donor ◽  
Splitting Energy ◽  
Vibronic Transitions

ABSTRACTWe performed infrared absorption and reflectivity measurements on serverai 6H-SiC samples at variable temperatures between T=5K and T=300K. From the temperature dependence of the observed absorption lines we separated electronic from vibronic transitions. The electronic transitions are assumed to be due to transitions from the neutral nitrogen donor occupying the three different carbon lattice sites in 6H-SiC into excited states. We determined polarization and the oscillator strengths of these transitions. From the temperature dependence of the electronic transitions we determined the valley-orbit-splitting energy and we demonstrated the influence of compensation. For the different vibronic transitions we determined the Grüneisen constants.

Temperature dependence of phonon modes, dielectric functions, and interband electronic transitions in Cu2ZnSnS4 semiconductor films

2012 ◽  
Vol 14 (28) ◽  
pp. 9936 ◽  
Author(s):  
Wenwu Li ◽  
Kai Jiang ◽  
Jinzhong Zhang ◽  
Xiangui Chen ◽  
Zhigao Hu ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electronic Transitions ◽  
Semiconductor Films ◽  
Phonon Modes
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