Temperature dependence of phonon modes, dielectric functions, and interband electronic transitions in Cu2ZnSnS4 semiconductor films

2012 ◽  
Vol 14 (28) ◽  
pp. 9936 ◽  
Author(s):  
Wenwu Li ◽  
Kai Jiang ◽  
Jinzhong Zhang ◽  
Xiangui Chen ◽  
Zhigao Hu ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electronic Transitions ◽  
Semiconductor Films ◽  
Phonon Modes

Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC

2004 ◽  
Vol 457-460 ◽  
pp. 649-652 ◽  
Author(s):  
Caroline Blanc ◽  
Julien Pernot ◽  
Jean Camassel
Keyword(s):  
Temperature Dependence ◽  
Phonon Modes

scholarly journals The effect of strong electron-rattling phonon coupling on some superconducting properties

2019 ◽  
Vol 97 (5) ◽  
pp. 472-476
Author(s):  
Samin Tajik ◽  
Božidar Mitrović ◽  
Frank Marsiglio
Keyword(s):  
Temperature Dependence ◽  
Coupling Parameter ◽  
Nmr Relaxation ◽  
Superconducting Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Strong Electron ◽  
Particle Decay ◽  
Electron Phonon Coupling ◽  
The One

Using the Eliashberg theory of superconductivity we have examined several properties of a model in which electrons are coupled only to rattling phonon modes represented by a sharp peak in the electron–phonon coupling function. Our choice of parameters was guided by experiments on β-pyrochlore oxide superconductor KOs2Os6. We have calculated the temperature dependence of the superconducting gap edge; the quasi-particle decay rate; the NMR relaxation rate assuming that the coupling between the nuclear spins and the conduction electrons is via a contact hyperfine interaction, which would be appropriate for the O-site in KOs2Os6; and the microwave conductivity. We examined the limit of very strong coupling by considering three values of the electron–phonon coupling parameter λ = 2.38, 3, and 5 and did not assume that the rattler frequency Ω0 is temperature dependent in the superconducting state. We obtained a very unusual temperature dependence of the superconducting gap edge Δ(T), very much like the one extracted from photoemission experiments on KOs2O6.

scholarly journals Relaxation dynamics of deeply supercooled confined water in l,l-diphenylalanine micro/nanotubes

2015 ◽  
Vol 17 (48) ◽  
pp. 32126-32131 ◽  
Author(s):  
P. M. G. L. Ferreira ◽  
M. S. Ishikawa ◽  
S. Kogikoski ◽  
W. A. Alves ◽  
H. Martinho
Keyword(s):  
Temperature Dependence ◽  
Low Frequency ◽  
Confined Water ◽  
Relaxation Dynamics ◽  
Phonon Modes ◽  
Raman Active Phonon

The temperature dependence (10–290 K) of the low-frequency (20–150 cm−1) Raman-active phonon modes of deeply supercooled confined water in l,l-diphenylalanine micro/nanotubes was analyzed.

Das Temperaturverhalten der Phosphoreszenz und Fluoreszenz von K3CrF6 / The Temperature Dependence of Phosphorescence and Fluorescence in K3CrF6

1973 ◽  
Vol 28 (7) ◽  
pp. 1131-1135
Author(s):  
E. Koglin
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Fluorescence Emission ◽  
Electronic Transitions ◽  
Luminescence Spectra ◽  
Site Symmetry ◽  
Energy Eigenvalues ◽  
Crystal Field Parameters ◽  
Fluorescence And Phosphorescence

The luminescence behaviour of crystalline K3CrF6 is measured in the temperature range from 100 °K to 4.2 °K. The complex shows a very strong, broad fluorescence emission at temperatures lower than 20 °K. additionally also the phosphorescence transition can be observed. At temperatures higher than 20 °K only fluorescence is measured. The 2E→4A2-transition does not split suggesting Oh-site symmetry.Excitation- and luminescence spectra at 4.2 °K are the basis for a calculation of the energy eigenvalues. The crystal field parameters are fitted by the experimental data. The vibrational sidebands of the electronic transitions 2E - 4A2 an 4T24A2 are compared with Raman- and IRresults. From the temperature dependence and measured vibrational frequencies the zero phonon transitions of fluorescence and phosphorescence can be found

Temperature dependence of electronic transitions in MgO, α-Al2O3, and α-SiO2: Final-state effects on phonon coupling

1992 ◽  
Vol 45 (7) ◽  
pp. 3882-3885 ◽  
Author(s):  
W. L. O’Brien ◽  
J. Jia ◽  
Q-Y. Dong ◽  
T. A. Callcott ◽  
D. R. Mueller ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electronic Transitions ◽  
Phonon Coupling ◽  
Final State ◽  
Α Al2o3

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

2014 ◽  
Vol 806 ◽  
pp. 51-55 ◽  
Author(s):  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Raman Spectra ◽  
Secondary Ion Mass Spectrometry ◽  
Low Frequency ◽  
Electrical Measurement ◽  
Longitudinal Optical ◽  
Electronic Transitions ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
The Continuum

In this work, we focus on heavily aluminum (Al) doped 4H-SiC samples. We compare the effect of the Al concentration and Hall carrier concentration on the Raman spectra in a large frequency range. The Al concentration measured by Secondary Ion Mass Spectrometry ranged from 2×1016to 8.4×1019cm-3while the electrical measurement give a carrier concentration up to 5×1019Al×cm-3. On the Raman spectra, three different frequency domains have been analysed: i) at high frequency where we consider the change in longitudinal optical phonon-plasmon coupled mode; ii°) at low frequency where we consider the continuum of electronic transitions and iii°) finally, considering the Fano interference effect between the continuum of electronic transitions and the Folded Transverse Acoustic phonon modes. This analysis is applied to comment a Raman spectra mapping collected on a 4H-SiC 2 inch wafer.

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