Ultrasonic Beam Mixing as a Measure of the Nonlinear Parameters of Fused Silica and Single-Crystal NaCl

1970 ◽  
Vol 2 (4) ◽  
pp. 1098-1107 ◽  
Author(s):  
Russel W. Dunham ◽  
Hillard B. Huntington
Keyword(s):  
Single Crystal ◽  
Fused Silica ◽  
Ultrasonic Beam ◽  
Nonlinear Parameters

scholarly journals Terahertz and Microwave Optical Properties of Single-Crystal Quartz and Vitreous Silica and the Behavior of the Boson Peak

2021 ◽  
Vol 11 (15) ◽  
pp. 6733
Author(s):  
Mira Naftaly ◽  
Andrew Gregory
Keyword(s):  
Single Crystal ◽  
Silica Glass ◽  
Broad Band ◽  
Peak Frequency ◽  
Vitreous Silica ◽  
Peak Height ◽  
Fused Silica ◽  
Boson Peak ◽  
Single Crystal Quartz ◽  
Crystal Quartz

Z-cut single-crystal quartz and vitreous silica (silica glass or fused silica) were evaluated for use as reference materials for terahertz and microwave measurements of complex permittivity, with Z-cut quartz confirmed as being suitable. Measurements of refractive indices and absorption coefficients for o-ray and e-ray in quartz and for vitreous silica are reported at frequencies between 0.2 and 6 THz and at 36 and 144 GHz, and compared with data reported in the literature. A previously unreported broad band was seen in the extraordinary absorption of quartz. The Boson peak in silica glass absorption was examined, and for the first time, two negative relationships have been observed: between the refractive index and the Boson peak frequency, and between the Boson peak height and its frequency.

Rayleigh angle backscattering of ultrasonic beam from single crystal nickel in 111 and 110 planes

1985 ◽  
Vol 77 (5) ◽  
pp. 1950-1953 ◽  
Author(s):  
Laszlo Adler ◽  
Shaio‐Wen Wang ◽  
Ken Bolland ◽  
Michel de Billy ◽  
Gerard Quentin
Keyword(s):  
Single Crystal ◽  
Ultrasonic Beam ◽  
Rayleigh Angle

Growth of single‐crystal silicon islands on bulk fused silica by CO2laser annealing

1982 ◽  
Vol 40 (4) ◽  
pp. 319-321 ◽  
Author(s):  
W. G. Hawkins ◽  
J. G. Black ◽  
C. H. Griffiths
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Silicon Islands

Structural study of TiO2 thin films by micro-Raman spectroscopy

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 105-116 ◽  
Author(s):  
Ahti Niilisk ◽  
Mart Moppel ◽  
Martti Pärs ◽  
Ilmo Sildos ◽  
Taavi Jantson ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Single Crystal ◽  
Anatase Phase ◽  
Single Crystal Silicon ◽  
Atomic Layer ◽  
Fused Silica ◽  
Tio2 Thin Films ◽  
Crystal Silicon ◽  
Sapphire Substrates

AbstractThe Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

Ferroelectric Thin Films by sol-gel Processing

1989 ◽  
Vol 152 ◽  
Author(s):  
S. L. Swartz ◽  
P. J. Melling ◽  
C. S. Grant
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sol Gel ◽  
Fused Silica ◽  
Ferroelectric Materials ◽  
Ferroelectric Thin Films ◽  
Silicon Substrates ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTThe sol-gel processing of ferroelectric thin films is being investigated at Battelle. The ferroelectric materials included in this study are PbTiO3, Pb(Zr, Ti)O3 (PZT), and KNbO3. The sol-gel processing and crystallization of these films on fused silica, silicon, alumina, and single crystal SrTiO3 substrates is described.Sol-gel derived PbTiO3 thin films crystallized into the expected tetragonal perovskite structure when heated to 500 C and above. However, the crystallization of sol-gel PZT (20/80) thin films was found to be substratedependent. The heat-treated PZT films were amorphous when deposited on silica and silicon substrates. Crystalline perovskite PZT films were produced on alumina substrates, and epitaxial PZT films were produced on single-crystal SrTiO3. Heat treatment of sol-gel KNbO3 films on silicon and alumina substrates resulted in the crystallization of a variety of non-perovskite phases, but epitaxial growth of KNbO3 was observed on single crystal SrTiO3.

CO2 Laser Crystallization of Silicon on Bulk Fused Silica

1981 ◽  
Vol 4 ◽  
Author(s):  
William G. Hawkins ◽  
Jerry G. Black ◽  
Clifford H. Griffiths
Keyword(s):  
Thin Film ◽  
Thermal Stress ◽  
Laser Beam ◽  
Single Crystal ◽  
Film Growth ◽  
Fused Silica ◽  
Thin Film Growth ◽  
Recrystallization Process ◽  
Laser Crystallization ◽  
Oriented Single Crystal

ABSTRACTA CO2 laser beam was used to heat bulk fused silica which had previously defined Si3N4 and Si02 encapsulated LPCVD polysilicon islands (25,μm × 100μm) on its surface. The recrystallization process produces single crystal islands under a wide variety of laser treatment parameters. Under certain conditions, the recrystallized islands exhibit a (100) plane parallel to the substrate. These results are the first demonstration of oriented single crystal thin film growth using island predefinition, which eliminates thermal stress induced microcracking resulting from the mismatch in expansion between silicon and bulk fused silica.

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