Growth of single‐crystal silicon islands on bulk fused silica by CO2laser annealing

1982 ◽  
Vol 40 (4) ◽  
pp. 319-321 ◽  
Author(s):  
W. G. Hawkins ◽  
J. G. Black ◽  
C. H. Griffiths
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Silicon Islands

Structural study of TiO2 thin films by micro-Raman spectroscopy

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 105-116 ◽  
Author(s):  
Ahti Niilisk ◽  
Mart Moppel ◽  
Martti Pärs ◽  
Ilmo Sildos ◽  
Taavi Jantson ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Single Crystal ◽  
Anatase Phase ◽  
Single Crystal Silicon ◽  
Atomic Layer ◽  
Fused Silica ◽  
Tio2 Thin Films ◽  
Crystal Silicon ◽  
Sapphire Substrates

AbstractThe Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

On the formation of arrays of single-crystal silicon islands with small angular dispersion

2017 ◽  
Vol 11 (1) ◽  
pp. 202-205
Author(s):  
A. S. Markelov ◽  
V. N. Trushin ◽  
E. V. Chuprunov ◽  
V. V. Gribko ◽  
V. E. Kotomina ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Angular Dispersion ◽  
Crystal Silicon ◽  
Silicon Islands

Laser Induced Crystal Growth of Silicon Islands on Amorphous Substrates

1980 ◽  
Vol 1 ◽  
Author(s):  
D. K. Biegelsen ◽  
N. M. Johnson ◽  
D. J. Bartelink ◽  
M. D. Moyer
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistor ◽  
Single Crystal Silicon ◽  
Beam Spot ◽  
Crystal Silicon ◽  
Amorphous Substrates ◽  
Silicon Islands ◽  
Zone Growth ◽  
Lateral Heat

ABSTRACTThe importance of controlled lateral heat flow in the growth of single crystal silicon islands on amorphous substrates is demonstrated. In one approach the thermal profile on and around the islands is determined by varying the optical absorption with a variety of thin film structures. In another, beam spot shaping is used. Competitive nucleation is suppressed and continued in-plane epitaxial zone growth is enhanced. In this way we are able to produce single crystal islands 20μm wide and >20μm long. Routine production of such islands would enable new thin film transistor technologies.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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