scholarly journals Giant Rydberg excitons in Cu2O probed by photoluminescence excitation spectroscopy

2021 ◽  
Vol 104 (24) ◽  
Author(s):  
Marijn A. M. Versteegh ◽  
Stephan Steinhauer ◽  
Josip Bajo ◽  
Thomas Lettner ◽  
Ariadna Soro ◽  
...  
Keyword(s):  
Photoluminescence Excitation

scholarly journals Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

2019 ◽  
Vol 672 ◽  
pp. 146-151 ◽  
Author(s):  
M.A. Sulimov ◽  
M.V. Yakushev ◽  
J. Márquez-Prieto ◽  
I. Forbes ◽  
P.R. Edwards ◽  
...  
Keyword(s):  
Photoluminescence Excitation ◽  
Excitation Spectra

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

2017 ◽  
Vol 10 (2) ◽  
pp. 021002 ◽  
Author(s):  
Hideaki Murotani ◽  
Katsuto Nakamura ◽  
Tomonori Fukuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation

Electroluminescence and photoluminescence excitation study of asymmetric coupledGaAs∕AlxGa1−xAsV-groove quantum wires

2004 ◽  
Vol 70 (4) ◽  
Author(s):  
K. F. Karlsson ◽  
H. Weman ◽  
M.-A. Dupertuis ◽  
K. Leifer ◽  
A. Rudra ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Photoluminescence Excitation

Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

1996 ◽  
Vol 79 (11) ◽  
pp. 8682-8687 ◽  
Author(s):  
R. A. Hogg ◽  
K. Takahei ◽  
A. Taguchi
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Photoluminescence Excitation
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