Realization of exchange bias control with manipulation of interfacial frustration in magnetic complex oxide heterostructures

2021 ◽  
Vol 104 (17) ◽  
Author(s):  
Ji Zhang ◽  
Jack Yang ◽  
Grace L. Causer ◽  
Junjie Shi ◽  
Frank Klose ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Complex Oxide ◽  
Oxide Heterostructures ◽  
Magnetic Complex

Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

2010 ◽  
Vol 20 (15) ◽  
pp. 2436-2441 ◽  
Author(s):  
Michael Hambe ◽  
Adrian Petraru ◽  
Nikolay A. Pertsev ◽  
Paul Munroe ◽  
Valanoor Nagarajan ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Oxide Heterostructures ◽  
Magnetic Complex

Polarization-induced resistive switching behaviors in complex oxide heterostructures

2015 ◽  
Vol 107 (12) ◽  
pp. 122905 ◽  
Author(s):  
Lei Wu ◽  
Chao Zhang ◽  
Chunhui Dong ◽  
Chenglong Jia ◽  
Changjun Jiang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Complex Oxide ◽  
Oxide Heterostructures

scholarly journals Optically and electrically co-controlled resistance switching in complex oxide heterostructures

2017 ◽  
Vol 111 (17) ◽  
pp. 172901 ◽  
Author(s):  
Ming Zheng ◽  
Hao Ni ◽  
Weiyi Huang ◽  
Yaping Qi ◽  
Jiali Zeng ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Resistance Switching ◽  
Oxide Heterostructures

scholarly journals RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Complex Oxide ◽  
Perovskite Oxide ◽  
Ferroelectric Polarization ◽  
Oxide Heterostructures ◽  
Polarization Voltage ◽  
Data Memory ◽  
Current Voltage

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

scholarly journals Revealing the Structure and Oxygen Transport at Interfaces in Complex Oxide Heterostructures via 17O NMR Spectroscopy

2020 ◽  
Vol 32 (18) ◽  
pp. 7921-7931
Author(s):  
Michael A. Hope ◽  
Bowen Zhang ◽  
Bonan Zhu ◽  
David M. Halat ◽  
Judith L. MacManus-Driscoll ◽  
...  
Keyword(s):  
Nmr Spectroscopy ◽  
Oxygen Transport ◽  
Complex Oxide ◽  
17O Nmr ◽  
Oxide Heterostructures ◽  
17O Nmr Spectroscopy

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

2013 ◽  
Vol 12 (5) ◽  
pp. 397-402 ◽  
Author(s):  
Y. W. Yin ◽  
J. D. Burton ◽  
Y-M. Kim ◽  
A. Y. Borisevich ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Phase Transition ◽  
Complex Oxide ◽  
Oxide Interface ◽  
Magnetic Complex

Magnetoelectric complex-oxide heterostructures

2007 ◽  
Vol 87 (3-4) ◽  
pp. 155-164 ◽  
Author(s):  
R. Ramesh ◽  
F. Zavaliche ◽  
Y. H. Chu ◽  
L. W. Martin ◽  
S. Y. Yang ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Oxide Heterostructures

scholarly journals Carrier-mediated magnetoelectricity in complex oxide heterostructures

2007 ◽  
Vol 3 (1) ◽  
pp. 46-50 ◽  
Author(s):  
James M. Rondinelli ◽  
Massimiliano Stengel ◽  
Nicola A. Spaldin
Keyword(s):  
Complex Oxide ◽  
Oxide Heterostructures
Sign in / Sign up

Export Citation Format

Share Document