scholarly journals Coherent behavior in Heavy Fermion materials; Understanding and controlling competing interactions in complex oxide heterostructures

2015 ◽  
Author(s):  
Dmitry Anatolievitch Yarotski ◽  
Richard L. Sandberg
2021 ◽  
Vol 104 (3) ◽  
Author(s):  
P. Menegasso ◽  
J. C. Souza ◽  
I. Vinograd ◽  
Z. Wang ◽  
S. P. Edwards ◽  
...  

2015 ◽  
Vol 107 (12) ◽  
pp. 122905 ◽  
Author(s):  
Lei Wu ◽  
Chao Zhang ◽  
Chunhui Dong ◽  
Chenglong Jia ◽  
Changjun Jiang ◽  
...  

1990 ◽  
Vol T31 ◽  
pp. 232-238 ◽  
Author(s):  
J W Allen ◽  
J-S Kang ◽  
L-Z Liu ◽  
O Gunnarsson ◽  
N E Christensen ◽  
...  

1986 ◽  
Vol 31 (1-4) ◽  
pp. 391-396
Author(s):  
J. L. Smith ◽  
D. W. Cooke

2002 ◽  
Vol 9 (4) ◽  
pp. 242-245 ◽  
Author(s):  
Claudia Dallera ◽  
Marco Grioni ◽  
Abhay Shukla ◽  
Gyorgy Vankò ◽  
John L. Sarrao

2017 ◽  
Vol 111 (17) ◽  
pp. 172901 ◽  
Author(s):  
Ming Zheng ◽  
Hao Ni ◽  
Weiyi Huang ◽  
Yaping Qi ◽  
Jiali Zeng ◽  
...  

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.


Sign in / Sign up

Export Citation Format

Share Document