Polarization-induced resistive switching behaviors in complex oxide heterostructures

2015 ◽  
Vol 107 (12) ◽  
pp. 122905 ◽  
Author(s):  
Lei Wu ◽  
Chao Zhang ◽  
Chunhui Dong ◽  
Chenglong Jia ◽  
Changjun Jiang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Complex Oxide ◽  
Oxide Heterostructures

scholarly journals RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Complex Oxide ◽  
Perovskite Oxide ◽  
Ferroelectric Polarization ◽  
Oxide Heterostructures ◽  
Polarization Voltage ◽  
Data Memory ◽  
Current Voltage

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

scholarly journals The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport

2016 ◽  
Vol 18 (10) ◽  
pp. 7502-7510 ◽  
Author(s):  
Xiaoliang Zhong ◽  
Ivan Rungger ◽  
Peter Zapol ◽  
Hisao Nakamura ◽  
Yoshihiro Asai ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Resistive Switching ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Switching Behavior ◽  
Oxygen Scavenger ◽  
Resistive Switching Behavior ◽  
Oxide Heterostructures

First-principles modeling shows how resistive switching in oxide heterostructures is improved by inserting an “oxygen scavenger” layer.

scholarly journals Optically and electrically co-controlled resistance switching in complex oxide heterostructures

2017 ◽  
Vol 111 (17) ◽  
pp. 172901 ◽  
Author(s):  
Ming Zheng ◽  
Hao Ni ◽  
Weiyi Huang ◽  
Yaping Qi ◽  
Jiali Zeng ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Resistance Switching ◽  
Oxide Heterostructures

scholarly journals Revealing the Structure and Oxygen Transport at Interfaces in Complex Oxide Heterostructures via 17O NMR Spectroscopy

2020 ◽  
Vol 32 (18) ◽  
pp. 7921-7931
Author(s):  
Michael A. Hope ◽  
Bowen Zhang ◽  
Bonan Zhu ◽  
David M. Halat ◽  
Judith L. MacManus-Driscoll ◽  
...  
Keyword(s):  
Nmr Spectroscopy ◽  
Oxygen Transport ◽  
Complex Oxide ◽  
17O Nmr ◽  
Oxide Heterostructures ◽  
17O Nmr Spectroscopy

Magnetoelectric complex-oxide heterostructures

2007 ◽  
Vol 87 (3-4) ◽  
pp. 155-164 ◽  
Author(s):  
R. Ramesh ◽  
F. Zavaliche ◽  
Y. H. Chu ◽  
L. W. Martin ◽  
S. Y. Yang ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Oxide Heterostructures

scholarly journals Carrier-mediated magnetoelectricity in complex oxide heterostructures

2007 ◽  
Vol 3 (1) ◽  
pp. 46-50 ◽  
Author(s):  
James M. Rondinelli ◽  
Massimiliano Stengel ◽  
Nicola A. Spaldin
Keyword(s):  
Complex Oxide ◽  
Oxide Heterostructures

Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO3

2017 ◽  
Vol 5 (45) ◽  
pp. 11763-11768 ◽  
Author(s):  
Seungyang Heo ◽  
Daseob Yoon ◽  
Sangbae Yu ◽  
Junwoo Son ◽  
Hyun Myung Jang
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Room Temperature ◽  
Complex Oxide ◽  
Oxide Semiconductor ◽  
Perovskite Oxide ◽  
Polarization Reversal ◽  
Oxide Heterostructures ◽  
Semiconductor Thin Films ◽  
Substantial Interest

Complex oxide heterostructures composed of oxide semiconductor thin films and ferroelectric single crystals have attracted substantial interest due to the electrically switchable channel resistance by the polarization reversal of ferroelectrics.

Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

2010 ◽  
Vol 20 (15) ◽  
pp. 2436-2441 ◽  
Author(s):  
Michael Hambe ◽  
Adrian Petraru ◽  
Nikolay A. Pertsev ◽  
Paul Munroe ◽  
Valanoor Nagarajan ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Oxide Heterostructures ◽  
Magnetic Complex
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