Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor

2021 ◽  
Vol 103 (12) ◽  
Author(s):  
Hua-Ding Song ◽  
Peng-Fei Zhu ◽  
Jingzhi Fang ◽  
Ziqi Zhou ◽  
Huai Yang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect

scholarly journals Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

2019 ◽  
Vol 33 (13) ◽  
pp. 1950121 ◽  
Author(s):  
Juan Pei ◽  
Shu-Qin Xiao ◽  
Li-Min He ◽  
Kun Zhang ◽  
Huan-Huan Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
Potential Barrier ◽  
Coupling Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Band Model ◽  
Semiconductor Films ◽  
Text Type ◽  
Interfacial Potential

The large nonlinear Hall effect was found in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions formed by sputtering amorphous [Formula: see text]-type (FeCo)[Formula: see text]Ge[Formula: see text] magnetic semiconductor films on near intrinsic n-type Ge substrate. It is very interesting that the mechanisms of the large nonlinear Hall effect in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions are different at different temperature ranges. Below 10 K, the Hall resistance of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions is almost the same as the anomalous Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text] ferromagnetic films. While the temperature increased from 10 to 60 K, the nonlinear Hall resistance, longitudinal conductance, and magnetoresistance all increased quickly and reached the maximum at T[Formula: see text]=[Formula: see text]60 K. In this case, thermally excited conducting carriers can tunnel through the interfacial potential barrier in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions. Thus, in the range of 10–60 K, the enhanced nonlinear Hall resistance can be attributed to the anomalous Hall effect which was further enhanced by interfacial Rashba spin–orbit coupling effect. When the temperature further increased from 60 to 250 K, the interfacial potential barrier weakened gradually, and the Hall resistance and magnetoresistance decreased due to the shunting of the Ge substrate. In this case, the nonlinear Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions can be explained very well by the two-band model of nonlinear Hall effect.

Anomalous hall effect in the In1 − x Mn x Sb dilute magnetic semiconductor with MnSb inclusions

JETP Letters ◽  
2015 ◽  
Vol 101 (2) ◽  
pp. 130-135 ◽  
Author(s):  
E. I. Yakovleva ◽  
L. N. Oveshnikov ◽  
A. V. Kochura ◽  
K. G. Lisunov ◽  
E. Lahderanta ◽  
...  
Keyword(s):  
Hall Effect ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect

Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

2018 ◽  
Vol 532 ◽  
pp. 119-125
Author(s):  
Dang Duc Dung ◽  
Jiyoun Choi ◽  
Wuwei Feng ◽  
Nguyen Cao Khang ◽  
Sunglae Cho
Keyword(s):  
Hall Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect

scholarly journals Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
L. N. Oveshnikov ◽  
V. A. Kulbachinskii ◽  
A. B. Davydov ◽  
B. A. Aronzon ◽  
I. V. Rozhansky ◽  
...  
Keyword(s):  
Hall Effect ◽  
Berry Phase ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Semiconductor Structure ◽  
Two Dimensional

Room-temperature anomalous Hall effect in amorphous Si-based magnetic semiconductor

2012 ◽  
Vol 100 (9) ◽  
pp. 092404 ◽  
Author(s):  
Jia-Hsien Yao ◽  
Hsiu-Hau Lin ◽  
Yun-Liang Soo ◽  
Tai-Sing Wu ◽  
Jai-Lin Tsai ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Amorphous Si

Anomalous hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor

2017 ◽  
Vol 124 (3) ◽  
pp. 493-495
Author(s):  
R. K. Arslanov ◽  
T. R. Arslanov ◽  
M. I. Daunov
Keyword(s):  
Hall Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect

Structural and Magneto-transport Properties of Cr-doped In2O3 Diluted Magnetic Semiconductors

2008 ◽  
Vol 1119 ◽  
Author(s):  
N.B. Ukah ◽  
R K Gupta ◽  
K Ghosh ◽  
P K Kahol ◽  
R Giedd
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Electrical Transport ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Growth Pressure ◽  
Diluted Magnetic

AbstractWe report the experimental study of the structural and magnetotransport properties of chromium-doped indium oxide (In2O3:Cr) thin films using x-ray diffractometer, and by measuring the resistivity and Hall effect as a function of temperature in various magnetic fields. The In2O3:Cr diluted magnetic semiconductor thin films were grown under different partial oxygen pressures (Po2) on sapphire substrates using pulsed laser deposition (PLD) technique. Observed expansions in lattice parameter and crystal size in these films with increase in oxygen growth pressure are traceable to the reduction in oxygen vacancies. A redshift of the absorption edges of the samples with increase in oxygen growth pressure is attributed to the significant improvement in crystallinity. The exchange interaction between the electron spins in the conduction band and the spins of the Cr 3d electrons was evident in the anomalous Hall effect (AHE), which persisted up to 300 K. An analysis of the dc electrical transport in the films was carried out using hopping conduction and ionized impurity scattering models.

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