scholarly journals Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
L. N. Oveshnikov ◽  
V. A. Kulbachinskii ◽  
A. B. Davydov ◽  
B. A. Aronzon ◽  
I. V. Rozhansky ◽  
...  
Keyword(s):  
Hall Effect ◽  
Berry Phase ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Semiconductor Structure ◽  
Two Dimensional

scholarly journals Anomalous Hall effect and Berry phase in two-dimensional magnetic structures

2008 ◽  
Vol 104 ◽  
pp. 012018 ◽  
Author(s):  
V K Dugaev ◽  
J Barnaś ◽  
M Taillefumier ◽  
B Canals ◽  
C Lacroix ◽  
...  
Keyword(s):  
Hall Effect ◽  
Berry Phase ◽  
Anomalous Hall Effect ◽  
Two Dimensional ◽  
Magnetic Structures

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

High-temperature Dirac half-metal PdCl3: a promising candidate for realizing quantum anomalous Hall effect

2018 ◽  
Vol 6 (38) ◽  
pp. 10284-10291 ◽  
Author(s):  
Ya-ping Wang ◽  
Sheng-shi Li ◽  
Chang-wen Zhang ◽  
Shu-feng Zhang ◽  
Wei-xiao Ji ◽  
...  
Keyword(s):  
High Temperature ◽  
Hall Effect ◽  
Single Layer ◽  
Anomalous Hall Effect ◽  
Two Dimensional ◽  
Promising Candidate ◽  
Ideal Candidate ◽  
Half Metal ◽  
Quantum Anomalous Hall Effect

Single-layer PdCl3, a new two-dimensional honeycomb metal–halogen lattice, is proposed as an ideal candidate for realizing both a Dirac half-metal and the quantum anomalous Hall effect.

scholarly journals Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

2019 ◽  
Vol 33 (13) ◽  
pp. 1950121 ◽  
Author(s):  
Juan Pei ◽  
Shu-Qin Xiao ◽  
Li-Min He ◽  
Kun Zhang ◽  
Huan-Huan Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
Potential Barrier ◽  
Coupling Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Band Model ◽  
Semiconductor Films ◽  
Text Type ◽  
Interfacial Potential

The large nonlinear Hall effect was found in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions formed by sputtering amorphous [Formula: see text]-type (FeCo)[Formula: see text]Ge[Formula: see text] magnetic semiconductor films on near intrinsic n-type Ge substrate. It is very interesting that the mechanisms of the large nonlinear Hall effect in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions are different at different temperature ranges. Below 10 K, the Hall resistance of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions is almost the same as the anomalous Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text] ferromagnetic films. While the temperature increased from 10 to 60 K, the nonlinear Hall resistance, longitudinal conductance, and magnetoresistance all increased quickly and reached the maximum at T[Formula: see text]=[Formula: see text]60 K. In this case, thermally excited conducting carriers can tunnel through the interfacial potential barrier in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions. Thus, in the range of 10–60 K, the enhanced nonlinear Hall resistance can be attributed to the anomalous Hall effect which was further enhanced by interfacial Rashba spin–orbit coupling effect. When the temperature further increased from 60 to 250 K, the interfacial potential barrier weakened gradually, and the Hall resistance and magnetoresistance decreased due to the shunting of the Ge substrate. In this case, the nonlinear Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions can be explained very well by the two-band model of nonlinear Hall effect.

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