Room-temperature anomalous Hall effect in amorphous Si-based magnetic semiconductor

2012 ◽  
Vol 100 (9) ◽  
pp. 092404 ◽  
Author(s):  
Jia-Hsien Yao ◽  
Hsiu-Hau Lin ◽  
Yun-Liang Soo ◽  
Tai-Sing Wu ◽  
Jai-Lin Tsai ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Amorphous Si

Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

2013 ◽  
Vol 102 (20) ◽  
pp. 202408 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
Y. Liu ◽  
C. Y. Jiang ◽  
H. Ma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

Room temperature anomalous Hall effect in antiferromagnetic Mn3SnN films

2020 ◽  
Vol 117 (22) ◽  
pp. 222404
Author(s):  
Yunfeng You ◽  
Hua Bai ◽  
Xianzhe Chen ◽  
Yongjian Zhou ◽  
Xiaofeng Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

scholarly journals Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

2019 ◽  
Vol 33 (13) ◽  
pp. 1950121 ◽  
Author(s):  
Juan Pei ◽  
Shu-Qin Xiao ◽  
Li-Min He ◽  
Kun Zhang ◽  
Huan-Huan Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
Potential Barrier ◽  
Coupling Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Band Model ◽  
Semiconductor Films ◽  
Text Type ◽  
Interfacial Potential

The large nonlinear Hall effect was found in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions formed by sputtering amorphous [Formula: see text]-type (FeCo)[Formula: see text]Ge[Formula: see text] magnetic semiconductor films on near intrinsic n-type Ge substrate. It is very interesting that the mechanisms of the large nonlinear Hall effect in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions are different at different temperature ranges. Below 10 K, the Hall resistance of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions is almost the same as the anomalous Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text] ferromagnetic films. While the temperature increased from 10 to 60 K, the nonlinear Hall resistance, longitudinal conductance, and magnetoresistance all increased quickly and reached the maximum at T[Formula: see text]=[Formula: see text]60 K. In this case, thermally excited conducting carriers can tunnel through the interfacial potential barrier in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions. Thus, in the range of 10–60 K, the enhanced nonlinear Hall resistance can be attributed to the anomalous Hall effect which was further enhanced by interfacial Rashba spin–orbit coupling effect. When the temperature further increased from 60 to 250 K, the interfacial potential barrier weakened gradually, and the Hall resistance and magnetoresistance decreased due to the shunting of the Ge substrate. In this case, the nonlinear Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions can be explained very well by the two-band model of nonlinear Hall effect.

scholarly journals Room-temperature ferromagnetism and anomalous Hall effect in Si1−xMnx(x≈0.35) alloys

2011 ◽  
Vol 84 (7) ◽  
Author(s):  
B. A. Aronzon ◽  
V. V. Rylkov ◽  
S. N. Nikolaev ◽  
V. V. Tugushev ◽  
S. Caprara ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Anomalous Hall Effect

Room-Temperature Large Terahertz Anomalous Hall Effect in Weyl Antiferromagnet Mn3Sn Thin Film

2020 ◽  
Author(s):  
Takuya Matsuda ◽  
Natsuki Kanda ◽  
Tomoya Higo ◽  
N. P. Armitage ◽  
Satoru Nakatsuji ◽  
...  
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect
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