Field Emission at Grain Boundaries: Modeling the Conductivity in Highly Doped Polycrystalline Semiconductors

2016 ◽  
Vol 5 (2) ◽  
Author(s):  
Nicolas Sommer ◽  
Jürgen Hüpkes ◽  
Uwe Rau
Keyword(s):  
Grain Boundaries ◽  
Field Emission ◽  
Polycrystalline Semiconductors

Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films

2018 ◽  
Vol 5 (4) ◽  
pp. 715-726 ◽  
Author(s):  
Viet Huong Nguyen ◽  
Ulrich Gottlieb ◽  
Anthony Valla ◽  
Delfina Muñoz ◽  
Daniel Bellet ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Boundaries ◽  
Electron Tunneling ◽  
Transparent Conductive Oxides ◽  
New Model ◽  
Polycrystalline Semiconductors

A new model is presented to describe charge scattering at grain boundaries in degenerately doped polycrystalline semiconductors such as transparent conductive oxides.

Superior field emission and alternating current conduction mechanisms for grains and grain boundaries in an NiO-[CdO]2 nanocomposite

2020 ◽  
Vol 142 ◽  
pp. 109462 ◽  
Author(s):  
S. Karmakar ◽  
B. Raviteja ◽  
Chetan D. Mistari ◽  
Vanshree Parey ◽  
Ranjit Thapa ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Field Emission ◽  
Alternating Current ◽  
Conduction Mechanisms ◽  
Current Conduction

Grain Boundary Phase Analysis of Silicon Nitride by a Newly Developed 300kv Field-Emission Electron Microscope

1994 ◽  
Vol 346 ◽  
Author(s):  
Y. Bando ◽  
H. Suematsu ◽  
M. Mitomo
Keyword(s):  
Electron Microscope ◽  
Silicon Nitride ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Phase Analysis ◽  
Field Emission ◽  
Boundary Phase ◽  
Emission Electron ◽  
Triple Points

ABSTRACTThe grain boundary phase of silicon nitride containing additives Y2O3 and Nd2O3 has been studied by means of a newly developed 300kV field emission ATEM. The composition of the two-grain boundary phase of about 1 nm thick is successfully determined. It is then found that the compositions among the grain boundaries are not the same and the additives of Y2O3-Nd2O3 are poor in the two-grain boundary, while they are rich in the triple points.

Transient response of electrically active grain boundaries in polycrystalline semiconductors

1988 ◽  
Vol 38 (3) ◽  
pp. 491-497 ◽  
Author(s):  
Patrizio F Tua ◽  
Marco Rossinelli ◽  
Felix Greuter
Keyword(s):  
Grain Boundaries ◽  
Transient Response ◽  
Polycrystalline Semiconductors
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