scholarly journals Efficient Spin Injection into Graphene through a Tunnel Barrier: Overcoming the Spin-Conductance Mismatch

2014 ◽  
Vol 2 (4) ◽  
Author(s):  
Qingyun Wu ◽  
Lei Shen ◽  
Zhaoqiang Bai ◽  
Minggang Zeng ◽  
Ming Yang ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Spin Conductance

Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

scholarly journals Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

2002 ◽  
Vol 81 (2) ◽  
pp. 265-267 ◽  
Author(s):  
V. F. Motsnyi ◽  
J. De Boeck ◽  
J. Das ◽  
W. Van Roy ◽  
G. Borghs ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

2002 ◽  
Vol 80 (7) ◽  
pp. 1240-1242 ◽  
Author(s):  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
G. Itskos ◽  
G. Kioseoglou ◽  
A. Petrou
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Magnetic Metal ◽  
Electrical Spin

Al2O3 tunnel barrier as a good candidate for spin injection into silicon

2010 ◽  
Vol 54 (8) ◽  
pp. 741-744 ◽  
Author(s):  
R. Benabderrahmane ◽  
M. Kanoun ◽  
N. Bruyant ◽  
C. Baraduc ◽  
A. Bsiesy ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier

scholarly journals Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
S. P. Dash ◽  
D. Goll ◽  
P. Kopold ◽  
H. D. Carstanjen
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Spin Injection ◽  
Schottky Contact ◽  
Tunnel Barrier ◽  
Si Substrate ◽  
High Crystalline Quality ◽  
Tunnel Barriers ◽  
Interface Structures

In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS). In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed. In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them. In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at .

scholarly journals Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

2021 ◽  
pp. 2009771
Author(s):  
Xiaoyue Zhang ◽  
Ning Tang ◽  
Liuyun Yang ◽  
Chi Fang ◽  
Caihua Wan ◽  
...  
Keyword(s):  
Spin Injection ◽  
Electron Gas ◽  
Tunnel Barrier ◽  
2D Electron Gas ◽  
Electrical Spin
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