Room temperature electrical spin injection from a new spin gapless ferromagnetic semiconducting inverse Heusler alloy Mn2CoSi into p-Si via SiO2 tunnel barrier

2019 ◽  
Vol 125 (17) ◽  
pp. 173903 ◽  
Author(s):  
Nilay Maji ◽  
T. K. Nath
Keyword(s):  
Heusler Alloy ◽  
Room Temperature ◽  
Spin Injection ◽  
Tunnel Barrier ◽  
Electrical Spin

scholarly journals Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

2002 ◽  
Vol 81 (2) ◽  
pp. 265-267 ◽  
Author(s):  
V. F. Motsnyi ◽  
J. De Boeck ◽  
J. Das ◽  
W. Van Roy ◽  
G. Borghs ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

2002 ◽  
Vol 80 (7) ◽  
pp. 1240-1242 ◽  
Author(s):  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
G. Itskos ◽  
G. Kioseoglou ◽  
A. Petrou
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Magnetic Metal ◽  
Electrical Spin

scholarly journals Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

2011 ◽  
Vol 84 (16) ◽  
Author(s):  
Kun-Rok Jeon ◽  
Byoung-Chul Min ◽  
Young-Hun Jo ◽  
Hun-Sung Lee ◽  
Il-Jae Shin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Electrical Spin

Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature

2007 ◽  
Vol 20 (6) ◽  
pp. 405-408 ◽  
Author(s):  
Asawin Sinsarp ◽  
Takashi Manago ◽  
Fumiyoshi Takano ◽  
Hiro Akinaga
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Electrical Spin

scholarly journals Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
S. P. Dash ◽  
D. Goll ◽  
P. Kopold ◽  
H. D. Carstanjen
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Spin Injection ◽  
Schottky Contact ◽  
Tunnel Barrier ◽  
Si Substrate ◽  
High Crystalline Quality ◽  
Tunnel Barriers ◽  
Interface Structures

In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS). In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed. In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them. In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at .

scholarly journals Spin-Controlled Vertical-Cavity Surface-Emitting Lasers

2012 ◽  
Vol 2012 ◽  
pp. 1-15 ◽  
Author(s):  
Nils C. Gerhardt ◽  
Martin R. Hofmann
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Optoelectronic Devices ◽  
Optical Excitation ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Electrical Spin ◽  
Vertical Cavity

We discuss the concept of spin-controlled vertical-cavity surface-emitting lasers (VCSELs) and analyze it with respect to potential room-temperature applications in spin-optoelectronic devices. Spin-optoelectronics is based on the optical selection rules as they provide a direct connection between the spin polarization of the recombining carriers and the circular polarization of the emitted photons. By means of optical excitation and numerical simulations we show that spin-controlled VCSELs promise to have superior properties to conventional devices such as threshold reduction, spin control of the emission, or even much faster dynamics. Possible concepts for room-temperature electrical spin injection without large external magnetic fields are summarized, and the progress on the field of purely electrically pumped spin-VCSELs is reviewed.

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