Tuning the Band Alignment and Electronic Properties of ${\rm{GaSe}}/{\rm{Sn}}$ X $_{2}$ ( X  = ${\rm{S}}$, ${\rm{Se}}$) Two-Dimensional van der Waals Heterojunctions via an Electric Field

2021 ◽  
Vol 16 (4) ◽  
Author(s):  
Bo Sun ◽  
Yu-Feng Ding ◽  
Peng-Bin He ◽  
Yu-Qing Zhao ◽  
Meng-Qiu Cai
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Two Dimensional

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field

2018 ◽  
Vol 20 (44) ◽  
pp. 27856-27864 ◽  
Author(s):  
P. T. T. Le ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Layer By Layer ◽  
Gallium Selenide ◽  
Two Dimensional ◽  
Parent Materials ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials.

Strain and electric field tunable electronic properties of type-II band alignment in van der Waals GaSe/MoSe2 heterostructure

2019 ◽  
Vol 521 ◽  
pp. 92-99 ◽  
Author(s):  
Khang D. Pham ◽  
Chuong V. Nguyen ◽  
Huong T.T. Phung ◽  
Huynh V. Phuc ◽  
B. Amin ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii

Tunable electronic properties and band alignments of InS-arsenene heterostructure via external strain and electric field

2021 ◽  
Author(s):  
Hui Yao ◽  
Chao Zhang ◽  
Qiang Wang ◽  
Jianwei Li ◽  
Yunjin Yu ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Band Alignments ◽  
Novel Devices ◽  
External Strain

The Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials have been extensively recognized promising candidates for fabricating multi-functional novel devices. In this work, we investigated structural and electronic...

scholarly journals Computational insights into structural, electronic and optical characteristics of GeC/C2N van der Waals heterostructures: effects of strain engineering and electric field

RSC Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 2967-2974 ◽  
Author(s):  
Hong T. T. Nguyen ◽  
Tuan V. Vu ◽  
Van Thinh Pham ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
High Performance ◽  
Van Der Waals ◽  
Strain Engineering ◽  
Optical Characteristics ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Two Dimensional Materials ◽  
Properties Of Materials

Vertical heterostructures from two or more than two two-dimensional materials are recently considered as an effective tool for tuning the electronic properties of materials and for designing future high-performance nanodevices.

Biaxial strain, electric field and interlayer distance-tailored electronic structure and magnetic properties of two-dimensional g-C3N4/Li-adsorbed Cr2Ge2Te6 van der Waals heterostructures

2021 ◽  
Vol 23 (10) ◽  
pp. 6171-6181
Author(s):  
Yaoqi Gao ◽  
Baozeng Zhou ◽  
Xiaocha Wang
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Electric Field ◽  
Van Der Waals ◽  
Interlayer Distance ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Van Der Waals Heterostructures

It is found that the biaxial strain, electric field and interlayer distance can effectively modulate the electronic structure and magnetic properties of two-dimensional van der Waals heterostructures.

Fabrication and magnetic-electronic properties of van der Waals Cr4Te5 ferromagnetic film

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Hao Liu ◽  
Huan Zheng ◽  
Chuanlan Ma ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Van Der Waals ◽  
Ferromagnetic Film ◽  
Ferromagnetic Materials ◽  
Two Dimensional ◽  
Actual Number ◽  
Intrinsic Ferromagnetism

Exploiting two-dimensional room temperature ferromagnetic materials is always a significant and valuable work. However, the actual number of satisfied materials with intrinsic ferromagnetism is very limited. Here, the van der...

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