Layer-Dependent Giant Magnetoresistance in Two-Dimensional CrPS4 Magnetic Tunnel Junctions

2021 ◽  
Vol 16 (2) ◽  
Author(s):  
Jie Yang ◽  
Shibo Fang ◽  
Yuxuan Peng ◽  
Shiqi Liu ◽  
Baochun Wu ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional

Analytical method for two dimensional current crowding effect in magnetic tunnel junctions

2002 ◽  
Vol 91 (10) ◽  
pp. 8783 ◽  
Author(s):  
Jian Chen ◽  
Yun Li ◽  
Janusz Nowak ◽  
Juan Fernandez de-Castro
Keyword(s):  
Analytical Method ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional ◽  
Current Crowding ◽  
Crowding Effect

Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Wei Yang ◽  
Yuan Cao ◽  
Jiangchao Han ◽  
Xiaoyang Lin ◽  
Xinhe Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional ◽  
Spin Filter

We theoretically predict the spin-filter induced large magnetoresistance in two-dimensional MTJs based on room temperature two-dimensional ferromagnet 1T-VSe2.

Tunable Tunneling Magnetoresistance in In-plane double barrier Magnetic Tunnel Junctions based on B Vacancy h-NB Nanoribbons

2022 ◽  
Author(s):  
Hailin Yu ◽  
Zhengguang Shao ◽  
Yongmei Tao ◽  
Xuefan Jiang ◽  
Yaojun Dong ◽  
...  
Keyword(s):  
Magnetic Materials ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Two Dimensional ◽  
Double Barrier

Magnetic tunnel junctions (MTJs) have attained new opportunities due to the emergence of two-dimensional (2D) magnetic materials after it has been proposed more than forty years. Here, an in-plane double...

High-performance Magnetic Tunnel Junctions Based on Two-Dimensional Bi2O2Se

2021 ◽  
pp. 168346
Author(s):  
Hao Liu ◽  
Pan Wang ◽  
Longfei Pan ◽  
Hongyu Wen ◽  
Yueyang Liu ◽  
...  
Keyword(s):  
High Performance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional

Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions

2000 ◽  
Vol 76 (5) ◽  
pp. 622-624 ◽  
Author(s):  
A. Anguelouch ◽  
B. D. Schrag ◽  
Gang Xiao ◽  
Yu Lu ◽  
P. L. Trouilloud ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional ◽  
Magnetic Switching ◽  
Micron Size

Highly Charged Ion Modified Magnetic Tunnel Junctions

2006 ◽  
Vol 960 ◽  
Author(s):  
Holger Grube ◽  
J. M. Pomeroy ◽  
A. C. Perrella ◽  
J. D. Gillaspy
Keyword(s):  
Magnetic Field ◽  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Oxide Thickness ◽  
Present Measurement ◽  
Field Sensor ◽  
Highly Charged Ion ◽  
Charged Ions

ABSTRACTWe have used highly charged ions (HCIs) such as Xe44+ to modify ultrathin aluminum oxide barriers in magnetic tunnel junctions (MTJs) in order to controllably adjust their electrical properties independently of oxide thickness. We have reduced the resistance area (RA) product of our MTJ devices by up to three orders of magnitude down to our present measurement uncertainty limit of 30 Ω·μm2 by varying the HCI dose. Preliminary experiments indicate that HCI modified Co/Al2O3/Co MTJs have a reduced magnetoresistance (MR) of ≈ 1% at room temperature as compared to ≈ 10% for undosed devices. The goal of this effort is to fabricate a magnetic field sensor in current-perpendicular-to-plane (CPP) geometry with an RA optimized for hard drive read heads. This is an improvement over presently demonstrated CPP architectures based on giant magnetoresistance or tunnel junctions, whose RAs are either to low or too high.

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