scholarly journals Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Kohei Etou ◽  
Satoshi Hiura ◽  
Soyoung Park ◽  
Kazuya Sakamoto ◽  
Junichi Takayama ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Room Temperature ◽  
Spin Transport ◽  
Light Emitting Diode ◽  
Polarized Light ◽  
Light Emitting ◽  
Spin Polarized

Chiral-induced spin selectivity enables a room-temperature spin light-emitting diode

Science ◽  
2021 ◽  
Vol 371 (6534) ◽  
pp. 1129-1133
Author(s):  
Young-Hoon Kim ◽  
Yaxin Zhai ◽  
Haipeng Lu ◽  
Xin Pan ◽  
Chuanxiao Xiao ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Polarized Light ◽  
Chiral Molecules ◽  
Circularly Polarized Light ◽  
Light Emitting ◽  
Circularly Polarized ◽  
Spin Polarized ◽  
Spin Led

In traditional optoelectronic approaches, control over spin, charge, and light requires the use of both electrical and magnetic fields. In a spin-polarized light-emitting diode (spin-LED), charges are injected, and circularly polarized light is emitted from spin-polarized carrier pairs. Typically, the injection of carriers occurs with the application of an electric field, whereas spin polarization can be achieved using an applied magnetic field or polarized ferromagnetic contacts. We used chiral-induced spin selectivity (CISS) to produce spin-polarized carriers and demonstrate a spin-LED that operates at room temperature without magnetic fields or ferromagnetic contacts. The CISS layer consists of oriented, self-assembled small chiral molecules within a layered organic-inorganic metal-halide hybrid semiconductor framework. The spin-LED achieves ±2.6% circularly polarized electroluminescence at room temperature.

scholarly journals Room Temperature GaN-Based Edge-Emitting Spin-Polarized Light Emitting Diode

2017 ◽  
Vol 29 (3) ◽  
pp. 338-341 ◽  
Author(s):  
Aniruddha Bhattacharya ◽  
Zunaid Baten ◽  
Thomas Frost ◽  
Pallab Bhattacharya
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Polarized Light ◽  
Light Emitting ◽  
Spin Polarized

Spin-Polarized Light-Emitting Diode Based on an Organic Bipolar Spin Valve

Science ◽  
2012 ◽  
Vol 337 (6091) ◽  
pp. 204-209 ◽  
Author(s):  
T. D. Nguyen ◽  
E. Ehrenfreund ◽  
Z. V. Vardeny
Keyword(s):  
Light Emitting Diode ◽  
Spin Valve ◽  
Polarized Light ◽  
Light Emitting ◽  
Spin Polarized

scholarly journals Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

2017 ◽  
Vol 114 (8) ◽  
pp. 1783-1788 ◽  
Author(s):  
Nozomi Nishizawa ◽  
Kazuhiro Nishibayashi ◽  
Hiro Munekata
Keyword(s):  
Circular Polarization ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Polarized Light ◽  
Tunnel Barrier ◽  
Light Emitting ◽  
Left Handed ◽  
Spin Polarized ◽  
Side Walls ◽  
Device Operation

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP whenJ> 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

2010 ◽  
Vol 96 (12) ◽  
pp. 123503 ◽  
Author(s):  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Wei-Hsun Lin ◽  
Shu-Cheng Mai ◽  
Shung-Yi Wu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Type Ii ◽  
Light Emitting ◽  
Gaas Quantum Dot ◽  
Room Temperature Operation

Ga1-xGdxN-Based Spin Polarized Light Emitting Diode

2011 ◽  
Vol 1290 ◽  
Author(s):  
Muhammad Jamil ◽  
Tahir Zaidi ◽  
Andrew Melton ◽  
Tianming Xu ◽  
Ian T. Ferguson
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Room Temperature Ferromagnetism ◽  
Polarized Light ◽  
Type Material ◽  
Degree Of Polarization ◽  
Co Doping ◽  
Spin Polarized ◽  
P Type ◽  
Co Doped

ABSTRACTIn this work, a room temperature spin-polarized LED based on ferromagnetic Ga1-xGdxN is reported. The device was grown by metalorganic chemical vapor deposition (MOCVD) and is the first report of a spin-LED based on Ga1-xGdxN. Electroluminescence from this device had a degree of polarization of 14.6% at 5000 Gauss and retained a degree of polarization of 9.3% after removal of the applied magnetic field. Ga1-xGdxN thin films were grown on 2 μm GaN templates and were co-doped with Si and Mg to achieve n-type and p-type materials. Co-doping of the Ga1-xGdxN films with Si produced conductive n-type material, while co-doping with Mg produced compensated p-type material. Both Si and Mg co-doped films exhibited room temperature ferromagnetism, measured by vibrating sample magnetometry.

Spin-Polarized Light-Emitting Diodes with Mn-Doped InAs Quantum Dot Nanomagnets as a Spin Aligner

Nano Letters ◽  
2005 ◽  
Vol 5 (2) ◽  
pp. 209-212 ◽  
Author(s):  
Subhananda Chakrabarti ◽  
Michael A. Holub ◽  
Pallab Bhattacharya ◽  
Tetsuya D. Mishima ◽  
Michael B. Santos ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Polarized Light ◽  
Light Emitting ◽  
Spin Polarized ◽  
Inas Quantum Dot ◽  
Mn Doped
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