Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

2010 ◽  
Vol 96 (12) ◽  
pp. 123503 ◽  
Author(s):  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Wei-Hsun Lin ◽  
Shu-Cheng Mai ◽  
Shung-Yi Wu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Type Ii ◽  
Light Emitting ◽  
Gaas Quantum Dot ◽  
Room Temperature Operation

The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes

2011 ◽  
Vol 323 (1) ◽  
pp. 466-469 ◽  
Author(s):  
Chi-Che Tseng ◽  
Wei-Hsun Lin ◽  
Shung-Yi Wu ◽  
Shu-Han Chen ◽  
Shih-Yen Lin
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Type Ii ◽  
Light Emitting ◽  
Gaas Quantum Dot

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

scholarly journals Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Kohei Etou ◽  
Satoshi Hiura ◽  
Soyoung Park ◽  
Kazuya Sakamoto ◽  
Junichi Takayama ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Room Temperature ◽  
Spin Transport ◽  
Light Emitting Diode ◽  
Polarized Light ◽  
Light Emitting ◽  
Spin Polarized

scholarly journals InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate

ACS Photonics ◽  
2014 ◽  
Vol 1 (7) ◽  
pp. 638-642 ◽  
Author(s):  
Siming Chen ◽  
Mingchu Tang ◽  
Qi Jiang ◽  
Jiang Wu ◽  
Vitaliy G. Dorogan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting ◽  
Gaas Quantum Dot

GaN quantum dot UV light emitting diode

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Current Injection ◽  
High Density ◽  
Light Emitting ◽  
Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

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