scholarly journals Thermal Conductivity of Oxide Tunnel Barriers in Magnetic Tunnel Junctions Measured by Ultrafast Thermoreflectance and Magneto-Optic Kerr Effect Thermometry

2020 ◽  
Vol 13 (2) ◽  
Author(s):  
Hyejin Jang ◽  
Luca Marnitz ◽  
Torsten Huebner ◽  
Johannes Kimling ◽  
Timo Kuschel ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Kerr Effect ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers ◽  
Oxide Tunnel ◽  
Magneto Optic

Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

2003 ◽  
Vol 93 (10) ◽  
pp. 6423-6425 ◽  
Author(s):  
B. G. Park ◽  
T. D. Lee ◽  
T. H. Lee ◽  
C. G. Kim ◽  
C. O. Kim
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers ◽  
Oxide Tunnel

1∕f noise in magnetic tunnel junctions with MgO tunnel barriers

2006 ◽  
Vol 99 (8) ◽  
pp. 08A906 ◽  
Author(s):  
Aisha Gokce ◽  
E. R. Nowak ◽  
See Hun Yang ◽  
S. S. P. Parkin
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

scholarly journals Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

2016 ◽  
Vol 108 (10) ◽  
pp. 102404 ◽  
Author(s):  
M. Piquemal-Banci ◽  
R. Galceran ◽  
S. Caneva ◽  
M.-B. Martin ◽  
R. S. Weatherup ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Tunnel Junctions ◽  
Hexagonal Boron Nitride ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers

Asymmetric Voltage Behavior of the Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions

2012 ◽  
Vol 190 ◽  
pp. 145-148
Author(s):  
A. Useinov ◽  
C. Gooneratne ◽  
J. Kosel
Keyword(s):  
Theoretical Model ◽  
Applied Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance ◽  
Magnetic Layers ◽  
Tunnel Barriers ◽  
In Series ◽  
Left And Right

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers.

scholarly journals Radiation Tolerance of Magnetic Tunnel Junctions With MgO Tunnel Barriers

2012 ◽  
Vol 59 (6) ◽  
pp. 3034-3038 ◽  
Author(s):  
Fanghui Ren ◽  
A. Jander ◽  
P. Dhagat ◽  
C. Nordman
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Radiation Tolerance ◽  
Tunnel Barriers
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