scholarly journals Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

2016 ◽  
Vol 108 (10) ◽  
pp. 102404 ◽  
Author(s):  
M. Piquemal-Banci ◽  
R. Galceran ◽  
S. Caneva ◽  
M.-B. Martin ◽  
R. S. Weatherup ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Tunnel Junctions ◽  
Hexagonal Boron Nitride ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers

scholarly journals Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4712-4718 ◽  
Author(s):  
Maëlis Piquemal-Banci ◽  
Regina Galceran ◽  
Florian Godel ◽  
Sabina Caneva ◽  
Marie-Blandine Martin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Tunnel Junctions ◽  
Hexagonal Boron Nitride ◽  
Magnetic Tunnel Junctions ◽  
Spin Filtering

Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

2003 ◽  
Vol 93 (10) ◽  
pp. 6423-6425 ◽  
Author(s):  
B. G. Park ◽  
T. D. Lee ◽  
T. H. Lee ◽  
C. G. Kim ◽  
C. O. Kim
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers ◽  
Oxide Tunnel

1∕f noise in magnetic tunnel junctions with MgO tunnel barriers

2006 ◽  
Vol 99 (8) ◽  
pp. 08A906 ◽  
Author(s):  
Aisha Gokce ◽  
E. R. Nowak ◽  
See Hun Yang ◽  
S. S. P. Parkin
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

scholarly journals Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions

2015 ◽  
Vol 10 (12) ◽  
pp. 1058-1063 ◽  
Author(s):  
M. Parzefall ◽  
P. Bharadwaj ◽  
A. Jain ◽  
T. Taniguchi ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Tunnel Junctions ◽  
Hexagonal Boron Nitride ◽  
Photon Emission

scholarly journals Erratum: Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Tunnel Barriers
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