scholarly journals State preparation by optical pumping in erbium-doped solids using stimulated emission and spin mixing

2008 ◽  
Vol 78 (4) ◽  
Author(s):  
B. Lauritzen ◽  
S. R. Hastings-Simon ◽  
H. de Riedmatten ◽  
M. Afzelius ◽  
N. Gisin
Keyword(s):  
Optical Pumping ◽  
Stimulated Emission ◽  
State Preparation ◽  
Erbium Doped

Stimulated emission in erbium-doped silicon structures under optical pumping

2001 ◽  
Vol 81 (1-3) ◽  
pp. 52-55 ◽  
Author(s):  
M.S. Bresler ◽  
O.B. Gusev ◽  
E.I. Terukov ◽  
I.N. Yassievich ◽  
B.P. Zakharchenya ◽  
...  
Keyword(s):  
Optical Pumping ◽  
Stimulated Emission ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Silicon Structures

Erbium Doped GaN Lasers by Optical Pumping

2016 ◽  
Author(s):  
Jingyu Lin ◽  
Hongxing Jiang
Keyword(s):  
Optical Pumping ◽  
Erbium Doped

High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
S. J. Murry ◽  
Rui Q. Yang ◽  
S. S. Pei ◽  
H. Q. Le ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Optical Pumping ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Stimulated Emission ◽  
Free Carrier Absorption ◽  
Type Ii ◽  
Optically Pumped ◽  
Internal Loss

AbstractStimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 μm, optically pumped by a pulsed 2-μm Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-μm InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of < 1. 1-W peak output power per facet in 6-μs pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm−1 near 70 K to ∼ 60–100 cm−1 near 180 K, which was possibly due to inter-valence band free carrier absorption.

Spontaneous and Stimulated Intersubband Emission Under Optical Pumping

1996 ◽  
Vol 450 ◽  
Author(s):  
P. Boucaud ◽  
S. Sauvage ◽  
O. Gauthier-Lafaye ◽  
Z. Moussa ◽  
F.-H. Julien ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Free Electron Laser ◽  
Population Inversion ◽  
Laser Emission ◽  
Optical Pumping ◽  
Stimulated Emission ◽  
Mid Infrared ◽  
Asymmetric Quantum ◽  
Waveguide Length ◽  
Subband Energy

ABSTRACTWe have investigated the mid-infrared spontaneous and stimulated emission between confined subbands in the conduction band of GaAs/AlGaAs quantum wells. The carriers which give rise to the intersubband emission are excited in the upper subbands using an intersubband optical pumping in coupled asymmetric quantum wells. The quantum wells are designed using phonon engineering in order to obtain population inversion between the second and first excited subband. This is obtained by adjusting the subband energy spacing between E2 and E1 close to the optical phonon energy which in turn allows an efficient relaxation. We have first observed intersubband spontaneous emission between E3 and E2 at 14 μm using an intersubband pumping with a CO2 laser in resonance with the E1-E3 transition. In a second set of experiments, the quantum wells are embedded in an infrared waveguide. We have measured the stimulated intersubband gain using a picosecond two-color free electron laser. The first color bleaches the E1-E3 transition and provides the population inversion. The intersubband stimulated gain is measured versus the waveguide length and photon energy. Stimulated gains ≈ 80 cm−1 are reported thus demonstrating that laser emission under optical pumping appears feasible in optimized structures. Finally, we show that intersubband emission can also be observed in quantum wells using an interband optical pumping.

scholarly journals Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

2014 ◽  
Vol 105 (5) ◽  
pp. 051106 ◽  
Author(s):  
R. Hui ◽  
R. Xie ◽  
I.-W. Feng ◽  
Z. Y. Sun ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Cross Section ◽  
Optical Pumping ◽  
Excitation Cross Section ◽  
Erbium Doped

scholarly journals Субмонослойные квантовые точки InGaAs/GaAs, выращенные методом МОС-гидридной эпитаксии

2019 ◽  
Vol 53 (8) ◽  
pp. 1159
Author(s):  
В.Я. Алешкин ◽  
Н.В. Байдусь ◽  
А.А. Дубинов ◽  
К.Е. Кудрявцев ◽  
С.М. Некоркин ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Room Temperature ◽  
Optical Pumping ◽  
Liquid Nitrogen Temperature ◽  
Stimulated Emission ◽  
Threshold Power ◽  
Gaas Substrates ◽  
Dot Density ◽  
Hydride Epitaxy

AbstractThe mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 10^10 cm^–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm^2.

scholarly journals Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range

2018 ◽  
Vol 52 (4) ◽  
pp. 464
Author(s):  
V.V. Rumyantsev ◽  
L.S. Bovkun ◽  
A.M. Kadykov ◽  
M.A. Fadeev ◽  
A.A. Dubinov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Pumping ◽  
High Energy ◽  
Stimulated Emission ◽  
Infrared Range ◽  
Recombination Mechanism ◽  
Carrier Heating ◽  
Long Wavelength ◽  
Carrier Recombination ◽  
Long Wavelength Infrared

AbstractWe investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Stimulated Emission ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Stimulated emission from the triatomic excimer Kr2F subjected to optical pumping

1980 ◽  
Vol 10 (12) ◽  
pp. 1561-1562 ◽  
Author(s):  
N G Basov ◽  
V S Zuev ◽  
A V Kanaev ◽  
L D Mikheev ◽  
D B Stavrovskiĭ
Keyword(s):  
Optical Pumping ◽  
Stimulated Emission
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