Ultrahigh-time-resolution coherent transient spectroscopy with incoherent light

1984 ◽  
Vol 30 (5) ◽  
pp. 2525-2536 ◽  
Author(s):  
Norio Morita ◽  
Tatsuo Yajima
Keyword(s):  
Time Resolution ◽  
Incoherent Light ◽  
Transient Spectroscopy

scholarly journals Incoherent Mid-Infrared Photon Echoes With Parametrically Downconverted Light

1999 ◽  
Vol 19 (1-4) ◽  
pp. 123-126
Author(s):  
Sander Woutersen ◽  
Mischa Bonn ◽  
Uli Emmerichs ◽  
Huib J. Bakker
Keyword(s):  
Time Resolution ◽  
Wavelength Region ◽  
Incoherent Light ◽  
Simple Method ◽  
Mid Infrared ◽  
Photon Echoes ◽  
Infrared Photon

We present a simple method to generate mid-infrared photon echoes, using parametrically downconverted incoherent light. The photon echoes generated in this way enable the study of the dynamics of vibrations in the 1.5–4.0 μm wavelength region with subpicosecond time resolution.

Incoherent Light Annealing of Glow Discharge PF5 - Implanted Silicon: Analysis of Damage Recovery and Electrical Activation

1985 ◽  
Vol 45 ◽  
Author(s):  
L. Pedulli ◽  
L. Correra ◽  
R. Galloni ◽  
O. Adekoya ◽  
A. Barhdadi ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Carrier Concentration ◽  
Deep Level ◽  
Concentration Profiles ◽  
Sheet Resistivity ◽  
Incoherent Light ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
Set Up

ABSTRACTSilicon wafers (100) orientation, were implanted with 3 × 1015 and 1 × 1016 PF5 at 30 keV by glow discharge and subsequently annealed by a commercially available lamp set-up. The annealing temperatures were in the range 620–980°C with irradiation times of 4–7 sec.Sheet resistivity and Hall measurements together with anodic oxidation stripping have been used to determine the mobility and the carrier concentration profiles; the residual damage and the presence of precipitates were investigated by Rutherford Backscattering (RBS) and Transmission Electron Microscopy (TEM).Comparison between the as-implanted dopant depth distribution and the carrier concentration profiles of the annealed samples shows the evolution of the electrically active, substitutional dopant fraction, at increasing annealing temperatures. It is found that the maximum electrical activity is obtained at 720°C; between 720°C and 820°C a process of reverse annealing takes place and the sheet resistivity increases by a factor of about 3. By annealing at temperatures higher than 820°C the substitutional dopant fraction increases again to its maximum value and it is possible to observe the presence of diffusion tails.Finally, RBS, TEM, and Deep Level Transient Spectroscopy (DLTS) were used to investigate the depth location and the evolution of the damage after annealing.

scholarly journals High time resolution with incoherent light in the Raman-fringe decay

1989 ◽  
Vol 62 (26) ◽  
pp. 3031-3033 ◽  
Author(s):  
Klaas Wynne ◽  
M. Müller ◽  
J. D. W. Van Voorst
Keyword(s):  
Time Resolution ◽  
High Time ◽  
High Time Resolution ◽  
Incoherent Light

Characterization of Ion-Implanted Si Rapidly Annealed with Incoherent Light

1981 ◽  
Vol 4 ◽  
Author(s):  
J. L. Benton ◽  
G. K. Celler ◽  
D. C. Jacobson ◽  
L. C. Kimerling ◽  
D. J. Lischner ◽  
...  
Keyword(s):  
High Efficiency ◽  
Low Cost ◽  
Complete Recovery ◽  
Depletion Region ◽  
Device Fabrication ◽  
Incoherent Light ◽  
Carrier Lifetimes ◽  
Transient Spectroscopy ◽  
Capacitance Transient

ABSTRACTIrradiation of Si wafers for 5 to 10 sec with high intensity tungsten halogen lamps produces complete recovery of the displacement damage resulting from ion implantation. Data for two different thermal cycles are presented, with As and B implant doses ranging from 1013 to 1016 ions cm−2. Sheet resistance measurements combined with Rutherford backscattering indicate full electrical activation of dopants with very little diffusion. Carrier lifetimes measured by a photoconductive method and by diode reverse recovery compare favorably with furnace annealing data, and capacitance transient spectroscopy reveals a low density of defects in the junction depletion region. These results combined with the inherent advantages of low cost and high efficiency make Rapid Thermal Annealing ideally suited for VLSI device fabrication.

Solar Corona Investigation by the Coronal Line Photometer at Lomnický Peak

1994 ◽  
Vol 144 ◽  
pp. 431-434
Author(s):  
M. Minarovjech ◽  
M. Rybanský
Keyword(s):  
Solar Corona ◽  
Time Resolution ◽  
Active Regions ◽  
High Time ◽  
High Time Resolution ◽  
List Type ◽  
Type Number ◽  
Coronal Line ◽  
Global Cycle

AbstractThis paper deals with a possibility to use the ground-based method of observation in order to solve basic problems connected with the solar corona research. Namely:1.heating of the solar corona2.course of the global cycle in the corona3.rotation of the solar corona and development of active regions.There is stressed a possibility of high-time resolution of the coronal line photometer at Lomnický Peak coronal station, and use of the latter to obtain crucial observations.

Periodic Variations in the Coronal Green Line Intensity and their Connection with the White-light Coronal Structures

2000 ◽  
Vol 179 ◽  
pp. 197-200
Author(s):  
Milan Minarovjech ◽  
Milan Rybanský ◽  
Vojtech Rušin
Keyword(s):  
Time Resolution ◽  
White Light ◽  
Short Time Scale ◽  
High Time Resolution ◽  
Green Line ◽  
Periodic Intensity ◽  
Coronal Green Line ◽  
Significant Intensity ◽  
Short Time ◽  
Coronal Structures

AbstractWe present an analysis of short time-scale intensity variations in the coronal green line as obtained with high time resolution observations. The observed data can be divided into two groups. The first one shows periodic intensity variations with a period of 5 min. the second one does not show any significant intensity variations. We studied the relation between regions of coronal intensity oscillations and the shape of white-light coronal structures. We found that the coronal green-line oscillations occur mainly in regions where open white-light coronal structures are located.

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