Doppler Line-Width Reduction

1954 ◽  
Vol 94 (5) ◽  
pp. 1393-1394 ◽  
Author(s):  
M. W. P. Strandberg ◽  
H. Dreicer
Keyword(s):  
Line Width ◽  
Width Reduction

scholarly journals Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots

2015 ◽  
Vol 26 (19) ◽  
pp. 195301 ◽  
Author(s):  
Jesús Herranz ◽  
Lukasz Wewior ◽  
Benito Alén ◽  
David Fuster ◽  
Luisa González ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spectral Line ◽  
Line Width ◽  
Preparation Process ◽  
Growth Interface ◽  
Spectral Line Width ◽  
Width Reduction

A study of Sub-micron Fan-out Wafer Level Packaging solutions

2018 ◽  
Vol 2018 (1) ◽  
pp. 000488-000493 ◽  
Author(s):  
Yoshio GOTO ◽  
Kosuke URUSHIHARA ◽  
Bunsuke TAKESHITA ◽  
Ken-Ichiro MORI
Keyword(s):  
Wave Front ◽  
Line Width ◽  
Image Sensors ◽  
Wide Field ◽  
Next Generation ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Manufacturing Methods ◽  
Width Reduction ◽  
Projection Optics

Abstract In Fan-out Wafer Level Packaging (FOWLP) processes, redistribution layer (RDL) line width reduction is a key challenge to expand the FOWLP market to multi-chip interconnections, including interconnections between SoC and DRAM, split-die connection of FPGA, and interconnections between image sensors and SoC. Next generation FOWLP requires 1.0 μm RDL and future FOWLP is targeting 0.8 μm RDL. To meet these requirements, Canon has developed new projection optics with a high NA and wide-field that is best suited for sub-micron FOWLP. These projection optics are a new option for FPA-5520iV steppers, offering NA 0.24 imaging and a 52 × 34 mm exposure field. FPA-5520iV steppers with NA 0.24 provide excellent 0.8 μm resolution performance throughout all imaging fields thanks to Canon's wave-front aberration based projection optics manufacturing methods and on-axis optical tilt focus sensor.

Line-Width Reduction of a Laser Diode Array Using an External Cavity with Two Feedback Mirrors

2007 ◽  
Vol 24 (9) ◽  
pp. 2587-2589
Author(s):  
Su Zhou-Ping ◽  
Lou Qi-Hong ◽  
Dong Jing-Xing ◽  
Zhou Jun ◽  
Wei Yun-Rong
Keyword(s):  
Line Width ◽  
Laser Diode ◽  
External Cavity ◽  
Diode Array ◽  
Laser Diode Array ◽  
Width Reduction

scholarly journals High scaling ratio line width reduction and fabrication method with electrohydrodynamic jet printing

2021 ◽  
Vol 16 (1) ◽  
pp. 23-29
Author(s):  
E Cheng ◽  
Tianxiao Zhang ◽  
Yu Cheng ◽  
Jinnan Li ◽  
Zhengyan Zhang
Keyword(s):  
Line Width ◽  
Fabrication Method ◽  
Electrohydrodynamic Jet Printing ◽  
Jet Printing ◽  
Width Reduction

On The Radii of Ap Stars

1976 ◽  
Vol 32 ◽  
pp. 49-55 ◽  
Author(s):  
F.A. Catalano ◽  
G. Strazzulla
Keyword(s):  
Observational Data ◽  
Line Width ◽  
Main Sequence ◽  
Main Sequence Stars ◽  
Ap Stars

SummaryFrom the analysis of the observational data of about 100 Ap stars, the radii have been computed under the assumption that Ap are main sequence stars. Radii range from 1.4 to 4.9 solar units. These values are all compatible with the Deutsch's period versus line-width relation.

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

SIZE DEPENDENT FMR LINE-SHIFT AND LINE-WIDTH STUDIES IN POLYCRYSTALLINE FERRITES AND GARNETS

1977 ◽  
Vol 38 (C1) ◽  
pp. C1-267-C1-269 ◽  
Author(s):  
C. M. SRIVASTAVA ◽  
M. J. PATNI ◽  
N. G. NANADIKAR
Keyword(s):  
Line Width ◽  
Line Shift ◽  
Size Dependent

Performance and Reliability of a MEMS-based tunable optical filter operating in the 1565 nm-1525 nm wavelength range

2002 ◽  
Vol 722 ◽  
Author(s):  
T. S. Sriram ◽  
B. Strauss ◽  
S. Pappas ◽  
A. Baliga ◽  
A. Jean ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Line Width ◽  
Insertion Loss ◽  
Optical Filter ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Reliability Testing ◽  
Silicon Nitride Membrane ◽  
Tunable Optical Filter ◽  
Extensive Performance

AbstractThis paper describes the results of extensive performance and reliability characterization of a silicon-based surface micro-machined tunable optical filter. The device comprises a high-finesse Fabry-Perot etalon with one flat and one curved dielectric mirror. The curved mirror is mounted on an electrostatically actuated silicon nitride membrane tethered to the substrate using silicon nitride posts. A voltage applied to the membrane allows the device to be tuned by adjusting the length of the cavity. The device is coupled optically to an input and an output single mode fiber inside a hermetic package. Extensive performance characterization (over operating temperature range) was performed on the packaged device. Parameters characterized included tuning characteristics, insertion loss, filter line-width and side mode suppression ratio. Reliability testing was performed by subjecting the MEMS structure to a very large number of actuations at an elevated temperature both inside the package and on a test board. The MEMS structure was found to be extremely robust, running trillions of actuations without failures. Package level reliability testing conforming to Telcordia standards indicated that key device parameters including insertion loss, filter line-width and tuning characteristics did not change measurably over the duration of the test.

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