Some Features of the Temperature Dependence of Infrared Absorption by Localized Vibrational Modes

1968 ◽  
Vol 173 (3) ◽  
pp. 860-868 ◽  
Author(s):  
A. E. Hughes
Keyword(s):  
Temperature Dependence ◽  
Infrared Absorption ◽  
Vibrational Modes ◽  
Localized Vibrational Modes

Rapid Thermal Annealing of Oxygen-Vacancy Centers In O-Implanted Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
H. J. Stein
Keyword(s):  
Activation Energy ◽  
Oxygen Vacancy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Silicon On Insulator ◽  
Vibrational Modes ◽  
Annealing Stage ◽  
Localized Vibrational Modes

ABSTRACTInfrared absorption by localized vibrational modes has been used to investigate rapid thermal annealing (RTA) of oxygen-vacancy (O-V) defects in O-implanted Si. At least three processes are involved in the annealing of O-V defects. An activation energy of 1.0 ± 0.2 eV for a process leading to O-V formation is attributed to O-V diffusion. The final O-V annealing stage is attributed to oxygen clustering around O2-V centers. Processes observed here in RTA are expected to be operative during implantation at the temperatures (400 to 600°C) used for production of silicon-on-insulator structures.

Temperature dependence of the normal vibrational modes of hcp Zr

1978 ◽  
Vol 18 (6) ◽  
pp. 2632-2642 ◽  
Author(s):  
C. Stassis ◽  
J. Zarestky ◽  
D. Arch ◽  
O. D. McMasters ◽  
B. N. Harmon
Keyword(s):  
Temperature Dependence ◽  
Vibrational Modes ◽  
Normal Vibrational Modes
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