Localized vibrational modes in semiconductors: Infrared absorption

2007 ◽  
pp. 1-44 ◽  
Author(s):  
William G. Spitzer
Keyword(s):  
Infrared Absorption ◽  
Vibrational Modes ◽  
Localized Vibrational Modes

Rapid Thermal Annealing of Oxygen-Vacancy Centers In O-Implanted Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
H. J. Stein
Keyword(s):  
Activation Energy ◽  
Oxygen Vacancy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Silicon On Insulator ◽  
Vibrational Modes ◽  
Annealing Stage ◽  
Localized Vibrational Modes

ABSTRACTInfrared absorption by localized vibrational modes has been used to investigate rapid thermal annealing (RTA) of oxygen-vacancy (O-V) defects in O-implanted Si. At least three processes are involved in the annealing of O-V defects. An activation energy of 1.0 ± 0.2 eV for a process leading to O-V formation is attributed to O-V diffusion. The final O-V annealing stage is attributed to oxygen clustering around O2-V centers. Processes observed here in RTA are expected to be operative during implantation at the temperatures (400 to 600°C) used for production of silicon-on-insulator structures.

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