Transverse Magnetoresistance and Hall Effect inp-Type Germanium

1968 ◽  
Vol 171 (3) ◽  
pp. 987-991 ◽  
Author(s):  
Jean W. Gallagher
Keyword(s):  
Hall Effect ◽  
Transverse Magnetoresistance

Electron motion and the Hall effect in monocrystalline zinc

1977 ◽  
Vol 55 (7-8) ◽  
pp. 620-628 ◽  
Author(s):  
C. M. Hurd ◽  
J. E. A. Alderson ◽  
S. P. McAlister
Keyword(s):  
Qualitative Analysis ◽  
Hall Effect ◽  
Path Integral ◽  
Basal Plane ◽  
Electron Motion ◽  
Cyclotron Motion ◽  
Transverse Magnetoresistance ◽  
Hall Resistivity ◽  
Magnetic Breakdown

The Hall resistivity ρ21(B, T) observed in Zn when [Formula: see text] and [Formula: see text] has been measured in fields B = 0.1–2.0 T and at temperatures T = 1.7–680 K. Supporting measurements of the transverse magnetoresistance have also been made at 1.7 K. A qualitative analysis of ρ21(B, T) is given separately for the cases when the cyclotron motion is confined to an axial or to the basal plane. In the latter case, the discussion is supported by path integral calculations based upon model orbits chosen to imitate all the geometrical possibilities arising from magnetic breakdown between the monster and needle sheets. The results provide an explanation of the principal features shown by ρ21(B, T).

Hall effect and transverse magnetoresistance in a low-dimensional conductor HfTe5

1982 ◽  
Vol 42 (11) ◽  
pp. 773-778 ◽  
Author(s):  
Mitsuru Izumi ◽  
Kunimitsu Uchinokura ◽  
Etsuyuki Matsuura ◽  
Shigeki Harada
Keyword(s):  
Hall Effect ◽  
Transverse Magnetoresistance ◽  
Low Dimensional

Conduction band of InAs

1968 ◽  
Vol 46 (15) ◽  
pp. 1669-1675 ◽  
Author(s):  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Valence Band ◽  
Conduction Band ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Impurity Content ◽  
Temperature Measurements ◽  
Energy Separation ◽  
Transverse Magnetoresistance

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In2Se3-doped and In2Te3-doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m2. An analysis of the results gives values of electron concentrations n0 and n1 and mobilities μ0 and μ1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n0 and n1, the energy separation of the (000) and [Formula: see text] minima E01 of pure InAs has been determined to be 0.70 + 0.02 eV and is found to decrease with increasing impurity content, the rate of reduction being 0.13 ± 0.02 eV/at.% selenium and 0.17 ± 0.03 eV/at.% tellurium. Room-temperature measurements of electroreflectance and infrared absorption have also been made, and these indicate that the variation in E01 is due to the movement of the (000) conduction-band minimum relative to the valence band.

scholarly journals Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Eva Díaz ◽  
Guillermo Herrera ◽  
Simón Oyarzún ◽  
Raul C. Munoz
Keyword(s):  
Integrated Circuits ◽  
Hall Effect ◽  
Electron Scattering ◽  
Anderson Localization ◽  
Mean Free Path ◽  
Negative Magnetoresistance ◽  
Cu Films ◽  
Transverse Magnetoresistance ◽  
The Mean ◽  
Electron Mean Free Path

AbstractWe report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K. The mean grain diameters are D = (8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetoresistance signal is positive in samples where D > L/2 (where L = 39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D < L/2. The sample where D = 20.2 nm exhibits a negative magnetoresistance at B < 2 Tesla and a positive magnetoresistance at B > 3 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization, confirming the localization phenomenon predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connectors with decreasing wire dimensions (D < L/2) employed in the design of Integrated Circuits.

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