Measurements of X-Ray Lattice Constant, Thermal Expansivity, and Isothermal Compressibility of Argon Crystals

1966 ◽  
Vol 150 (2) ◽  
pp. 703-711 ◽  
Author(s):  
O. G. Peterson ◽  
D. N. Batchelder ◽  
R. O. Simmons
Keyword(s):  
Lattice Constant ◽  
Isothermal Compressibility ◽  
Thermal Expansivity ◽  
X Ray

Lattice-constant and stress measurement in single crystals: a new method

2005 ◽  
Vol 38 (4) ◽  
pp. 678-684 ◽  
Author(s):  
Balder Ortner
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Lattice Constant ◽  
Stress Measurement ◽  
New Method ◽  
Lattice Plane ◽  
X Ray ◽  
Advantages And Disadvantages

A method for the X-ray determination of lattice-plane distances is given. Similar to Bond's method, it is based on the measurement of rocking curves, with some advantages and disadvantages compared with the former method. The new method is especially designed for single-crystal stress measurement. Its usefulness is demonstrated in two examples of lattice-constant and stress measurement.

MAGNETIC BEHAVIOR OF Ni-DOPED CuO NANOPARTICLES SYNTHESIZED BY MICROWAVE IRRADIATION METHOD

2019 ◽  
Vol 26 (05) ◽  
pp. 1850184 ◽  
Author(s):  
C. THANGAMANI ◽  
M. PONNAR ◽  
P. PRIYADHARSHINI ◽  
P. MONISHA ◽  
S. S. GOMATHI ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Microwave Irradiation ◽  
Copper Oxide ◽  
Lattice Constant ◽  
Copper Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Microwave Irradiation Method ◽  
Nickel Doping ◽  
X Ray ◽  
Ft Ir

Nickel-substituted copper oxide nanoparticles at various concentrations were synthesized by the microwave irradiation technique. The consequence of nickel doping on crystal structure, optical properties, and magnetic properties was examined by means of X-ray diffractometer, ultraviolet-visible spectrometer, Fourier transform infrared (FT-IR) spectrometer, transmission electron microscope, and vibrating sample magnetometer (VSM). X-ray diffraction analysis shows that the samples are monoclinic and their crystallite size varies from 25[Formula: see text]nm to 42[Formula: see text]nm, and lattice constant significantly increases with nickel concentration. Additional increase of nickel content (7%) decreases the lattice constant. TEM micrograph witnessed that the prepared nanoparticles were sphere-shaped and the particle distribution is in the range between 20 and 40[Formula: see text]nm. Bandgap measurement reveals that both undoped and nickel-doped copper oxides are direct bandgap semiconductor materials with bandgaps of 3.21 and 3.10[Formula: see text]eV, respectively, FT-IR spectra of the synthesized samples confirmed the nickel doping. VSM studies confirmed the ferromagnetic behavior of the synthesized samples at room temperature. The results revealed that the nickel-doped copper oxide nanoparticles synthesized via the microwave irradiation method exhibit better magnetic properties than the undoped copper oxide.

EPITAXY OF ULTRATHIN CoO FILMS STUDIED BY XPD AND GIXRD

2002 ◽  
Vol 09 (02) ◽  
pp. 937-941 ◽  
Author(s):  
P. LUCHES ◽  
C. GIOVANARDI ◽  
T. MOIA ◽  
S. VALERI ◽  
F. BRUNO ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Lattice Constant ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Direction Parallel ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Rocksalt Structure ◽  
Plane Lattice

CoO layers have been grown by exposing to oxygen the (001) body-centered-tetragonal (bct) surface of a Co ultrathin film epitaxially grown on Fe(001). Different oxide thicknesses in the 2–15 ML range have been investigated by means of synchrotron-radiation-based techniques. X-ray photoelectron spectroscopy has been used to check the formation of the oxide films; X ray photoelectron diffraction has given information concerning the symmetry of their unit cell; grazing incidence X-ray diffraction has allowed to evaluate precisely their in-plane lattice constant. The films show a CoO(001) rocksalt structure, rotated by 45° with respect to the bct Co substrate, with the [100] direction parallel to the substrate [110] direction. Their in-plane lattice constant increases as a function of thickness, to release the in-plane strain due to the 3% mismatch between the bulk CoO phase and the underlying substrate.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

The Effect of the Kα Doublet Diffracted Peak Position on the Precision of the Lattice Constant

1976 ◽  
Vol 20 ◽  
pp. 161-169
Author(s):  
C. P. Gazzara
Keyword(s):  
Least Squares ◽  
Lattice Constant ◽  
Analytical Procedure ◽  
Peak Position ◽  
X Ray Diffraction ◽  
X Ray ◽  
Characteristic Lines ◽  
Diffraction Peaks

The effect of the position of the X-ray unresolved Kα1 - Kα2 line doublets, diffracted from powder specimens, on the precision of the calculated lattice constant has been determined using a least-squares analysis. An analytical procedure to synthesize CuKα doublet X-ray diffraction peaks with X-ray characteristic lines (half widths ranging from 0.1° to 0.4° 26) has been applied in correcting the weighted wavelength of the doublet peak position. A series of correction curves was established from which the true 26 peak position of the weighted Kα wavelength could be determined from the measured 29 peak position.

Ge Diffusion in SnTe Crystal

1998 ◽  
Vol 527 ◽  
Author(s):  
O.E. Kaportseva ◽  
L.V. Yashina ◽  
V.B. Bobruiko ◽  
D.V. Safonov ◽  
V.F. Kozlovsky ◽  
...  
Keyword(s):  
Activation Energy ◽  
Lattice Constant ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Layer By Layer ◽  
X Ray ◽  
Temperature Range

ABSTRACTThis work is devoted to the study of Ge diffusion in crystalline Sn1-δTe1+8 with δ=0.0065±0.0008 in temperature range T=878-973 K by electron probe microanalysis and layer by layer X-ray analysis. For the latter lattice constant dependence on composition was determined: a(Å)=a(SnTe)-(0.368±0.008)× where 0<×<0. 1. Activation energy was found to be about 1.3 eV, much less than in the case of Ge diffusion in PbTe.

Synthesis of Source Powder for SiC Crystal Growth Using High Purity Silicon and Carbon Powder

2012 ◽  
Vol 529 ◽  
pp. 64-68
Author(s):  
H. Wang ◽  
C.F. Yan ◽  
H.K. Kong ◽  
J.J. Chen ◽  
J. Xin ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Lattice Constant ◽  
High Purity ◽  
Synthesis Temperature ◽  
Carbon Powder ◽  
X Ray Diffraction ◽  
Prepared Powder ◽  
X Ray ◽  
High Purity Silicon

This work focused on the synthesis of source powder for SiC crystal growth. SiC powder was prepared using high purity silicon and carbon powder. Broad ranges of temperature and Ar pressure were studied on the property of the as-prepared powder. X-ray diffraction (XRD) results show that SiC polytypes were determined by synthesis temperature, while not related to the variation of Ar pressure. The lattice constant of SiC would expand when Ar pressure decreased. Raman results revealed that the variation of Ar pressure would influence SiC crystallization. It was found that the concentrations of free C, free Si and nitrogen all varied with the variation of temperature or Ar pressure.

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