Electrical and Optical Properties of High-Resistivity Gallium Phosphide

1966 ◽  
Vol 148 (2) ◽  
pp. 715-721 ◽  
Author(s):  
Bernard Goldstein ◽  
S. S. Perlman
Keyword(s):  
Optical Properties ◽  
Gallium Phosphide ◽  
High Resistivity ◽  
Electrical And Optical Properties

Oxygen in Gallium Arsenide

1991 ◽  
Vol 240 ◽  
Author(s):  
Hans Ch. Alt
Keyword(s):  
Gallium Arsenide ◽  
Optical Properties ◽  
High Resistivity ◽  
Surface Layers ◽  
Electrical And Optical Properties ◽  
Active Defect ◽  
Oxygen Implantation ◽  
Compensation Behavior ◽  
High Concentrations

ABSTRACTThe influence of oxygen-related defects on the compensation behavior of semi-insulating gallium arsenide has been studied. Off-center substitutional oxygen (Ga-O-Ga center) forms an electrically active defect with two levels in the fundamental gap. The negative-U ordering of these levels is the origin for very unusual electrical and optical properties. By oxygen implantation and annealing high concentrations of this center are created which are technologically useful to obtain high-resistivity surface layers.

scholarly journals Electrical and Optical Properties of Indium and Lead Co-Doped Cd0.9Zn0.1Te

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5825
Author(s):  
Yasir Zaman ◽  
Vineet Tirth ◽  
Nasir Rahman ◽  
Amjad Ali ◽  
Rajwali Khan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Deep Level ◽  
Radiation Detection ◽  
Growth Direction ◽  
Middle Part ◽  
Hall Measurement ◽  
High Resistivity ◽  
Electrical And Optical Properties ◽  
Neutral Donor ◽  
Ir Microscopy

We have investigated the electrical and optical properties of Cd0.9Zn0.1Te:(In,Pb) wafers obtained from the tip, middle, and tail of the same ingot grown by modified vertical Bridgman method using I-V measurement, Hall measurement, IR Transmittance, IR Microscopy and Photoluminescence (PL) spectroscopy. I-V results show that the resistivity of the tip, middle, and tail wafers are 1.8 × 1010, 1.21 × 109, and 1.2 × 1010 Ω·cm, respectively, reflecting native deep level defects dominating in tip and tail wafers for high resistivity compared to the middle part. Hall measurement shows the conductivity type changes from n at the tip to p at the tail in the growth direction. IR Transmittance for tail, middle, and tip is about 58.3%, 55.5%, and 54.1%, respectively. IR microscopy shows the density of Te/inclusions at tip, middle, and tail are 1 × 103, 6 × 102 and 15 × 103/cm2 respectively. Photoluminescence (PL) spectra reflect that neutral acceptor exciton (A0,X) and neutral donor exciton (D0,X) of tip and tail wafers have high intensity corresponding to their high resistivity compared to the middle wafer, which has resistivity a little lower. These types of materials have a large number of applications in radiation detection.

Electrical and optical properties of the neutral nickel acceptor in gallium phosphide

1984 ◽  
Vol 17 (34) ◽  
pp. 6161-6167 ◽  
Author(s):  
A R Peaker ◽  
U Kaufmann ◽  
Zhan-Guo Wang ◽  
R Worner ◽  
B Hamilton ◽  
...  
Keyword(s):  
Optical Properties ◽  
Gallium Phosphide ◽  
Electrical And Optical Properties

scholarly journals Electronic Structure and Optical Properties of Gaas1-Xpx: A First-Principles Study

2020 ◽  
pp. 77-82
Author(s):  
Alaa A. Al-Jobory ◽  
Wael, I. Ahmed ◽  
Ibrahim J. A.
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Charge Transfer ◽  
First Principles ◽  
Density Functional ◽  
Gallium Phosphide ◽  
Two Dimensional ◽  
Density Of State ◽  
Electrical And Optical Properties ◽  
State Band

In this work, the effects of x-value on electrical and optical properties was studied for the two dimensional (2D)GaAs1-xPxstructure by applying the density functional theory.We found that the gallium arsenide(GaAs) and gallium phosphide(GaP) monolayers are bound to each other, while the charge transfer between these two materialsleads to tuning the band gap value between 1.5 eV for GaAs to 2.24 eV for GaP. The density of state, band structure, and optical properties are investigated in this paper.

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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