Electrical and optical properties of proton‐bombarded gallium phosphide

1973 ◽  
Vol 44 (1) ◽  
pp. 214-219 ◽  
Author(s):  
S. M. Spitzer ◽  
J. C. North
1984 ◽  
Vol 17 (34) ◽  
pp. 6161-6167 ◽  
Author(s):  
A R Peaker ◽  
U Kaufmann ◽  
Zhan-Guo Wang ◽  
R Worner ◽  
B Hamilton ◽  
...  

2020 ◽  
pp. 77-82
Author(s):  
Alaa A. Al-Jobory ◽  
Wael, I. Ahmed ◽  
Ibrahim J. A.

In this work, the effects of x-value on electrical and optical properties was studied for the two dimensional (2D)GaAs1-xPxstructure by applying the density functional theory.We found that the gallium arsenide(GaAs) and gallium phosphide(GaP) monolayers are bound to each other, while the charge transfer between these two materialsleads to tuning the band gap value between 1.5 eV for GaAs to 2.24 eV for GaP. The density of state, band structure, and optical properties are investigated in this paper.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe

2020 ◽  
Vol 62 (6) ◽  
pp. 680-690
Author(s):  
Tekalign A. Tikish ◽  
Ashok Kumar ◽  
Jung Yong Kim

2019 ◽  
Vol 672 ◽  
pp. 114-119 ◽  
Author(s):  
Michal Kučera ◽  
Adam Adikimenakis ◽  
Edmund Dobročka ◽  
Róbert Kúdela ◽  
Milan Ťapajna ◽  
...  

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