Infrared Absorption and Valence Band in Indium Antimonide

1960 ◽  
Vol 119 (2) ◽  
pp. 613-620 ◽  
Author(s):  
G. W. Gobeli ◽  
H. Y. Fan
Keyword(s):  
Valence Band ◽  
Infrared Absorption ◽  
Indium Antimonide

Infrared Absorption of Indium Antimonide

1956 ◽  
Vol 101 (2) ◽  
pp. 563-564 ◽  
Author(s):  
Eugene Blount ◽  
Joseph Callaway ◽  
Morrel Cohen ◽  
William Dumke ◽  
James Phillips
Keyword(s):  
Infrared Absorption ◽  
Indium Antimonide

Conduction band of InAs

1968 ◽  
Vol 46 (15) ◽  
pp. 1669-1675 ◽  
Author(s):  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Valence Band ◽  
Conduction Band ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Impurity Content ◽  
Temperature Measurements ◽  
Energy Separation ◽  
Transverse Magnetoresistance

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In2Se3-doped and In2Te3-doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m2. An analysis of the results gives values of electron concentrations n0 and n1 and mobilities μ0 and μ1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n0 and n1, the energy separation of the (000) and [Formula: see text] minima E01 of pure InAs has been determined to be 0.70 + 0.02 eV and is found to decrease with increasing impurity content, the rate of reduction being 0.13 ± 0.02 eV/at.% selenium and 0.17 ± 0.03 eV/at.% tellurium. Room-temperature measurements of electroreflectance and infrared absorption have also been made, and these indicate that the variation in E01 is due to the movement of the (000) conduction-band minimum relative to the valence band.

The Valence Band Structure of Tellurium. II. The Infrared Absorption

1970 ◽  
Vol 28 (4) ◽  
pp. 822-826 ◽  
Author(s):  
Takao Doi ◽  
Kenji Nakao ◽  
Hiroshi Kamimura
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Infrared Absorption ◽  
Valence Band Structure

Infrared Absorption of Indium Antimonide

1955 ◽  
Vol 98 (4) ◽  
pp. 966-968 ◽  
Author(s):  
W. Kaiser ◽  
H. Y. Fan
Keyword(s):  
Infrared Absorption ◽  
Indium Antimonide

Temperature-Dependent Infrared Absorption of Hg-Based II-VI Semiconductor Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
Z. Yang ◽  
Y. Lansari ◽  
J. W. Han ◽  
Z. Yu ◽  
J. F. Schetzina
Keyword(s):  
Optical Absorption ◽  
Valence Band ◽  
Infrared Absorption ◽  
Spectral Region ◽  
Theoretical Calculations ◽  
Band Offset ◽  
Temperature Dependent ◽  
Valence Band Offset ◽  
Transition Energies ◽  
A Value

ABSTRACTThe optical absorption of a series of HgTe/Cd0.85 Hg0. 15 Te superlattices (SLs) have been measured in the spectral region from 2 to 12 µm at temperatures from 300 K down to 4.2 K. Several subband transitions were identified and their transition energies were compared with theoretical calculations, with the valence band offset δEv between HgTe and CdTe as a fitting parameter. It is found that at a given temperature, a value of δEv = 420 ± 100 meV fits the results of all the SLs, and δEv does not depend on temperature to within ±100 meV.

Infrared Absorption in Indium Antimonide

1955 ◽  
Vol 99 (6) ◽  
pp. 1893-1894 ◽  
Author(s):  
W. G. Spitzer ◽  
H. Y. Fan
Keyword(s):  
Infrared Absorption ◽  
Indium Antimonide
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