Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement

2021 ◽  
Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Photoemission Spectroscopy ◽  
Direct Evaluation ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Effective Masses

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...

scholarly journals Direct observation of double valence-band extrema and anisotropic effective masses of the thermoelectric material SnSe

2017 ◽  
Vol 57 (1) ◽  
pp. 010301 ◽  
Author(s):  
Takanobu Nagayama ◽  
Kensei Terashima ◽  
Takanori Wakita ◽  
Hirokazu Fujiwara ◽  
Tetsushi Fukura ◽  
...  
Keyword(s):  
Valence Band ◽  
Thermoelectric Material ◽  
Direct Observation ◽  
Effective Masses

scholarly journals E-kRelation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Zhang Chao ◽  
Xu Da-Qing ◽  
Liu Shu-Lin ◽  
Liu Ning-Zhuang
Keyword(s):  
Valence Band ◽  
Theoretical Basis ◽  
Carrier Mobility ◽  
Energy Levels ◽  
Hole Mobility ◽  
Strained Si ◽  
Effective Masses ◽  
Splitting Energy ◽  
Analytic Models ◽  
Strained Materials

Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. TheE-krelation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, theE-krelation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design.

Electronic structure and transport properties of ternary skutterudite: CoX3/2Y3/2

2009 ◽  
Vol 1166 ◽  
Author(s):  
Dmitri Volja ◽  
Marco Fornari ◽  
Boris Kozinsky ◽  
Nicola Marzari
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Valence Band ◽  
Power Factor ◽  
First Principles ◽  
First Principles Calculations ◽  
Wannier Functions ◽  
Effective Masses ◽  
Fundamental Cause ◽  
Parabolic Dispersion

AbstractElectronic properties of ternary skutterudites AX3/2Y3/2 (A=Co, X=Ge, Sn and Y=S, Te) are investigated using first principles calculations to clarify recent experimental results. Band derivatives are computed accurately within an approach based on Maximally Localized Wannier Functions (MLWFs). Band structures exhibit larger effective masses compared to parental binary CoSb3. Our results also indicate a more parabolic dispersion near the top of the valence band and a multivalley character in both conduction and valence band. Despite the improved thermopower these skutterudites has relatively low power factor due to increased resistivity. The fundamental cause of such large resistivity seems to be associated with the ionicity of the bonding.

Infrared Absorption and Valence Band in Indium Antimonide

1960 ◽  
Vol 119 (2) ◽  
pp. 613-620 ◽  
Author(s):  
G. W. Gobeli ◽  
H. Y. Fan
Keyword(s):  
Valence Band ◽  
Infrared Absorption ◽  
Indium Antimonide
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