Temperature Dependence of the Breakdown Field of Barium Titanate

1959 ◽  
Vol 113 (2) ◽  
pp. 456-458 ◽  
Author(s):  
P. H. Fang ◽  
W. S. Brower
Keyword(s):  
Barium Titanate ◽  
Temperature Dependence ◽  
Breakdown Field

The temperature dependence of the debye-waller-factor in barium titanate

1981 ◽  
Vol 37 (1) ◽  
pp. 507-510 ◽  
Author(s):  
K. H. Ehses ◽  
H. Bock ◽  
K. Fischer
Keyword(s):  
Barium Titanate ◽  
Temperature Dependence ◽  
Waller Factor ◽  
Debye Waller Factor

Temperature dependence dielectric properties of modified barium titanate-PVB composites

2013 ◽  
Author(s):  
N. J. Joshi ◽  
P. B. Rakshit ◽  
G. S. Grewal ◽  
V. Shrinet ◽  
A. Pratap
Keyword(s):  
Dielectric Properties ◽  
Barium Titanate ◽  
Temperature Dependence

Effects of Processing on Microstructure and Dielectric Properties of Ultrafine- Grained Barium Titanate Based Ceramics for BME-MLCC Applications

2008 ◽  
Vol 368-372 ◽  
pp. 43-46 ◽  
Author(s):  
Tian Wang ◽  
Xiao Hui Wang ◽  
Guo Feng Yao ◽  
Yi Chi Zhang ◽  
Xun Xun Liao ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Barium Titanate ◽  
Milling Time ◽  
Breakdown Field ◽  
Ultrafine Grain ◽  
High Resistivity ◽  
Low Dielectric ◽  
Ultrafine Grain Size ◽  
Ultrafine Grained ◽  
High Dielectric

Ultrafine-grained ceramics based on nano-scale barium titanate for BME-MLCC applications have been prepared. Relationships of milling time, microstructures and dielectric properties have been investigated. With processing selected carefully, the present ceramics show ultrafine grain size (180nm) and homogeneous microstructures, well with high dielectric constant (ε25=2550), low dielectric loss (<0.02), high resistivity, high breakdown field and X7R temperature specifications, which would be promising materials for the next generation BME-MLCC applications.

Temperature Dependence of the Coarsening Behavior of Barium Titanate Grains

2000 ◽  
Vol 83 (12) ◽  
pp. 3202-3204 ◽  
Author(s):  
Myung-Goo Kang ◽  
Doh-Yeon Kim ◽  
Ho-Yong Lee ◽  
Nong M. Hwang
Keyword(s):  
Barium Titanate ◽  
Temperature Dependence ◽  
Coarsening Behavior

Temperature Dependence of Breakdown Field in p-π-n GaN Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Osinsky ◽  
M. S. Shur ◽  
R. Gaska
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Elevated Temperatures ◽  
Electric Breakdown ◽  
Breakdown Field ◽  
Power Devices ◽  
Avalanche Photodetectors

ABSTRACTWe present the results of the study of the electric breakdown in p-π-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

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