Temperature dependence of electromechanical properties and strain in barium titanate hafnate transducers

1986 ◽  
Vol 5 (3) ◽  
pp. 305-306 ◽  
Author(s):  
A. Tawfik ◽  
M. I. Abd El Ati
RSC Advances ◽  
2017 ◽  
Vol 7 (59) ◽  
pp. 37148-37157 ◽  
Author(s):  
Mengnan Ruan ◽  
Dan Yang ◽  
Wenli Guo ◽  
Shuo Huang ◽  
Yibo Wu ◽  
...  

Barium titanate (BT) particles, BT-KH570 particles, and polar plasticizer tri-n-butyl phosphate (TBP) were added into BIIR matrix to form a dielectric elastomer composite, which had a high dielectric constant, good mechanical properties, and large actuated strain.


2010 ◽  
Vol 33 (4) ◽  
pp. 383-390 ◽  
Author(s):  
A. K. Shukla ◽  
V. K. Agrawal ◽  
I. M. L. Das ◽  
Janardan Singh ◽  
S. L. Srivastava

1981 ◽  
Vol 37 (1) ◽  
pp. 507-510 ◽  
Author(s):  
K. H. Ehses ◽  
H. Bock ◽  
K. Fischer

2020 ◽  
Vol 22 (9) ◽  
pp. 2000325 ◽  
Author(s):  
Mylena Lorenz ◽  
Alexander Martin ◽  
Kyle G. Webber ◽  
Nahum Travitzky

1959 ◽  
Vol 113 (2) ◽  
pp. 456-458 ◽  
Author(s):  
P. H. Fang ◽  
W. S. Brower

2006 ◽  
Vol 45 ◽  
pp. 2422-2431
Author(s):  
Hiroshi Maiwa

Piezoelectric microelectromechanical systems (MEMS) employing ferrroelectric thin films have been extensively studied. In this paper, materials issues of the piezoeletric films are presented. Temperature dependence of the electrical and electromechanical properties of Pb(ZrxTi1-x)O3 (PZT, x= 0.3, 0.52, and 0.7) thin films were measured using scanning probe microscopy in the temperature range from -100°C to 150°C. The field-induced displacement increased with increase of the temperature; however, their temperature dependence was relatively small, compared with that reported on bulk PZT ceramics. Thus far, the use of PZT film has been most widely studied for MEMS applications. However, the lead toxicity associated with PZT and other lead oxide-based ferroelectrics is problematic. Therefore, properties of the lead-free thin film piezoelectrics are also described in this paper. As candidate for the lead-free piezoelectrics, Bi4-xNdxTi3O12 (BNT) and Ba(Zr0.2Ti0.8)O3 (BZT) thin films are chosen. BNT and BZT films prepared by chemical solution deposition exhibit field-induced strain corresponding to 38 pm/V and 35 pm/V, respectively.


Sign in / Sign up

Export Citation Format

Share Document