Effective Masses of Electrons in Indium Arsenide and Indium Antimonide

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

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Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium Arsenide

Physical Review ◽

10.1103/physrev.124.1314 ◽

1961 ◽

Vol 124 (5) ◽

pp. 1314-1317 ◽

Cited By ~ 56

Author(s):

Robert E. Morrison

Keyword(s):

Gallium Arsenide ◽

Indium Arsenide ◽

Indium Antimonide ◽

Optical Constants

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HIGH PULSED FIELD MAGNETORESISTANCE IN INDIUM ANTIMONIDE AND INDIUM ARSENIDE

Canadian Journal of Physics ◽

10.1139/p63-097 ◽

1963 ◽

Vol 41 (6) ◽

pp. 890-922 ◽

Cited By ~ 11

Author(s):

C. H. Champness

Keyword(s):

Indium Arsenide ◽

Indium Antimonide ◽

Room Temperature ◽

Fold Increase ◽

Individual Bands ◽

Conduction Theory ◽

The Individual ◽

Pulsed Fields ◽

Maximum Field ◽

Oriented Single Crystal

Measurements of transverse magnetoresistance have been made using pulsed fields up to about 300 kilo-oersteds on oriented single-crystal samples of near-intrinsic indium antimonide and extrinsic indium arsenide at room temperature. At the maximum field, about a 400-fold resistivity increase was found in indium antimonide and about a 4-fold increase in indium arsenide. The variation with field can largely be accounted for by classical two-carrier conduction theory, even though ħωc/kT > 1 and [Formula: see text] for the electrons in indium antimonide. At the lower fields in indium antimonide the individual bands alone give no measurable contribution to the magnetoresistance, indicating that for the electrons at least, the relaxation time must be almost independent of energy. While no strong evidence of Landau quantization effects was apparent, the magnetoresistance values at the higher fields in general fell below the classical theoretical curve. This could be interpreted as a variation of the electron mobility at high fields such that approximately [Formula: see text].

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