HIGH PULSED FIELD MAGNETORESISTANCE IN INDIUM ANTIMONIDE AND INDIUM ARSENIDE
Measurements of transverse magnetoresistance have been made using pulsed fields up to about 300 kilo-oersteds on oriented single-crystal samples of near-intrinsic indium antimonide and extrinsic indium arsenide at room temperature. At the maximum field, about a 400-fold resistivity increase was found in indium antimonide and about a 4-fold increase in indium arsenide. The variation with field can largely be accounted for by classical two-carrier conduction theory, even though ħωc/kT > 1 and [Formula: see text] for the electrons in indium antimonide. At the lower fields in indium antimonide the individual bands alone give no measurable contribution to the magnetoresistance, indicating that for the electrons at least, the relaxation time must be almost independent of energy. While no strong evidence of Landau quantization effects was apparent, the magnetoresistance values at the higher fields in general fell below the classical theoretical curve. This could be interpreted as a variation of the electron mobility at high fields such that approximately [Formula: see text].