scholarly journals Synthesis of Bi 2 S 3 thin films based on pulse-plating bismuth nanocrystallines and its photoelectrochemical properties

2020 ◽  
Vol 7 (8) ◽  
pp. 200479
Author(s):  
Fangchang Ding ◽  
Qiujin Wang ◽  
Shaofei Zhou ◽  
Guochen Zhao ◽  
Ying Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Pulse Plating ◽  
Potassium Citrate ◽  
Photoelectrochemical Properties ◽  
High Quality ◽  
Glass Substrates ◽  
Structure Morphology ◽  
Plating Method ◽  
Fto Glass

The solubility of Bi 3+ in aqueous solution is an important factor that limits the fabrication of high-quality Bi 2 S 3 thin films. In order to find a low-cost method to manufacture high-quality Bi 2 S 3 thin films, we are reporting the preparation of the Bi 2 S 3 thin films based on pulse-plating method in this paper for the first time. The nano-bismuth particles were obtained by electroplating on fluorine-doped SnO 2 (FTO)-coated conducting glass substrates with saturated bismuth potassium citrate solution as the electroplating bath, and then it was put into a muffle furnace to oxidize. Finally, the thin films depositing on FTO glass substrates were put into the thioacetamide solution for vulcanization. In the end, the Bi 2 S 3 thin films were successfully prepared on FTO glass substrates. Different characterization techniques were used to characterize the structure, morphology and photoelectrochemical properties of the prepared thin films. The test results revealed that we used this method to synthesize the high-quality Bi 2 S 3 thin films, thus the Bi 2 S 3 materials synthesized through this method are promising candidates in photoelectrochemical application.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

scholarly journals Characterization and photoelectrochemical properties of CICS thin films grown via an electrodeposition route

RSC Advances ◽  
2017 ◽  
Vol 7 (47) ◽  
pp. 29469-29480 ◽  
Author(s):  
Adel Chihi ◽  
Brahim Bessais
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Low Cost ◽  
Electrochemical Technique ◽  
Photoelectrochemical Properties ◽  
Polycrystalline Thin Films ◽  
Ito Glass ◽  
Ce Content

In this work, cerium doped CuInS2 (CIS) polycrystalline thin films with different Ce content are firstly synthesized on indium doped tin oxide (ITO) glass via a low-cost electrochemical technique.

Sol–gel synthesis of PZT thin films on FTO glass substrates for electro-optic devices

2019 ◽  
Vol 93 (3) ◽  
pp. 623-632
Author(s):  
Ali Shoghi ◽  
Hossein Abdizadeh ◽  
Amid Shakeri ◽  
Mohammad Reza Golobostanfard
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Glass Substrates ◽  
Electro Optic ◽  
Sol Gel Synthesis ◽  
Fto Glass

scholarly journals Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Zhang ◽  
Bo Long ◽  
Shuying Cheng ◽  
Weibo Zhang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Crystallite Size ◽  
Low Cost ◽  
Band Gap Energy ◽  
Vacuum Evaporation ◽  
Glass Substrates ◽  
Sulfurization Temperature ◽  
Czts Thin Films

Copper zinc tin sulfur (CZTS) thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1), appropriate band gap (~1.5 eV), and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS). In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT) precursors were deposited by thermal evaporation and then sulfurized in N2+ H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112) orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm,1.714×1017 cm−3, and 3.89 cm2/(V · s), respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

Grain Enhancement of Thin Silicon Layers Using Optical Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
B. L. Sopori ◽  
Jeff Alleman ◽  
W. Chen ◽  
T. Y. Tan ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Low Cost ◽  
Optical Processing ◽  
Glass Substrates ◽  
Coated Substrate ◽  
Grain Sizes ◽  
Fine Grain ◽  
A New Technique ◽  
Short Time

ABSTRACTWe describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (∼ 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

scholarly journals A Low-Cost Mechatronic System for Sol-Gel Spraypyrolysis Technique

2020 ◽  
Author(s):  
Martin E. Oviedo ◽  
Fernando Alvira ◽  
Agustin Apaolaza ◽  
Juan F. Martiarena ◽  
Matías R. Tejerina
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Low Cost ◽  
Sol Gel ◽  
Mechatronic System ◽  
Thermal Component ◽  
High Quality ◽  
Operation Conditions

This work presents a design of a low-cost spray pyrolysis automatized system which allows to manufacture high quality thin films. In particular, the thermal component of this instrument is modelled in different operation conditions, analyzed, and controlled. Also, different configurations for the whole instrument are analyzed.

scholarly journals Solution-Based Deposition of Transparent Eu-Doped Titanium Oxide Thin Films for Potential Security Labeling and UV Screening

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1132 ◽  
Author(s):  
Anara Molkenova ◽  
Laura Khamkhash ◽  
Ainur Zhussupbekova ◽  
Kuanysh Zhussupbekov ◽  
Sagyntay Sarsenov ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Low Cost ◽  
Visible Region ◽  
Photovoltaic Devices ◽  
Oxide Thin Films ◽  
Glass Substrates ◽  
Relaxation Transitions ◽  
Red Luminescence ◽  
Metal Doped

Transparent titanium oxide thin films attract enormous attention from the scientific community because of their prominent properties, such as low-cost, chemical stability, and optical transparency in the visible region. In this study, we developed an easy and scalable solution-based process for the deposition of transparent TiOx thin films on glass substrates. We showed that the proposed method is also suitable for the fabrication of metal-doped TiOx thin films. As proof-of-the-concept, europium Eu(III) ions were introduced into TiOx film. A photoluminescence (PL) study revealed that Eu-doped TiOx thin films showed strong red luminescence associated with 5D0→7Fj relaxation transitions in Eu (III). We found that prepared TiOx thin films significantly reduce the transmittance of destructive UV radiation; a feature that can be useful for the protection of photovoltaic devices. In addition, transparent and luminescent TiOx thin films can be utilized for potential security labeling.

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