High aspect ratio AFM Probe processing by helium-ion-beam induced deposition

Microscopy ◽  
2014 ◽  
Vol 63 (suppl 1) ◽  
pp. i30.2-i30 ◽  
Author(s):  
Keiko Onishi ◽  
Hongxuan Guo ◽  
Syoko Nagano ◽  
Daisuke Fujita
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Ion Beam ◽  
Helium Ion ◽  
Afm Probe

scholarly journals Branched High Aspect Ratio Nanostructures Fabricated by Focused Helium Ion Beam Induced Deposition of an Insulator

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 232
Author(s):  
Frances I. Allen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Ion Beam ◽  
Single Step ◽  
Direct Write ◽  
Step Method ◽  
Helium Ion ◽  
Nanofabrication Technique ◽  
Selective Placement ◽  
Branched Nanostructures

Helium ion beam induced deposition using the gaseous precursor pentamethylcyclopentasiloxane is employed to fabricate high aspect ratio insulator nanostructures (nanopillars and nanocylinders) that exhibit charge induced branching. The branched nanostructures are analyzed by transmission electron microscopy. It is found that the side branches form above a certain threshold height and that by increasing the flow rate of the precursor, the vertical growth rate and branching phenomenon can be significantly enhanced, with fractalesque branching patterns observed. The direct-write ion beam nanofabrication technique described herein offers a fast single-step method for the growth of high aspect ratio branched nanostructures with site-selective placement on the nanometer scale.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Focused Ion Beam: Advanced Technique for Device Modification

1994 ◽  
Vol 337 ◽  
Author(s):  
Marsha Abramo ◽  
Loren Hahn
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Advanced Technique ◽  
Aspect Ratios ◽  
Chip Technology ◽  
Design Changes ◽  
Critical Feedback

ABSTRACTFocused ion beam (FIB) technology is used to modify circuits for early-product design debug; it also has the capability to create probe points to underlying metallurgy, allowing device characterization while maintaining full functionality. These techniques provide critical feedback to designers for rapid verification of proposed design changes.Current FIB technology has its limitations because of redeposition of sputtered material; this phenomena may induce vertical electrical shorts and limit the achievable aspect ratio of a milled via to 6:1. Therefore, innovative enhancements are required to provide modification capability on planar chip technology which may utilize up to five levels of metallurgy. The ability to achieve high-aspect-ratio milling is required to access underlying circuitry. Vias with aspect ratios of 10:1 are necessary in some cases.This paper reviews a gas-assisted etching (GAE) process that enhances FIB milling by volatilizing the sputtered material, examines the results obtained from utilizing the GAE process for high-aspect-ratio milling, and discusses selectivity of semiconductor materials (silicon, aluminum, tungsten and silicon dioxide).

Using High Aspect Ratio AFM Probe for Digital Twin Development of SiC FEA

2021 ◽  
Author(s):  
Konstantin Nikiforov ◽  
Nikolay Egorov ◽  
Ivan Sokolov ◽  
Valery Strebko ◽  
Vladimir Mikhailovskiy ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Digital Twin ◽  
Afm Probe
Sign in / Sign up

Export Citation Format

Share Document