Abstract: Ion beam fabrication of 400 Å, high aspect‐ratio lines in poly methyl methacrylate (PMMA)

1979 ◽  
Vol 16 (6) ◽  
pp. 1625-1625 ◽  
Author(s):  
L. Karapiperis ◽  
C. A. Lee
Keyword(s):  
Aspect Ratio ◽  
Methyl Methacrylate ◽  
High Aspect Ratio ◽  
Ion Beam ◽  
Poly Methyl Methacrylate

Bosch-like method for creating high aspect ratio poly(methyl methacrylate) (PMMA) structures

2012 ◽  
Author(s):  
Marius Haiducu ◽  
Dan Sameoto ◽  
Ian Foulds ◽  
Robert W. Johnstone ◽  
Ash M. Parameswaran
Keyword(s):  
Aspect Ratio ◽  
Methyl Methacrylate ◽  
High Aspect Ratio ◽  
Poly Methyl Methacrylate

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Focused Ion Beam: Advanced Technique for Device Modification

1994 ◽  
Vol 337 ◽  
Author(s):  
Marsha Abramo ◽  
Loren Hahn
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Advanced Technique ◽  
Aspect Ratios ◽  
Chip Technology ◽  
Design Changes ◽  
Critical Feedback

ABSTRACTFocused ion beam (FIB) technology is used to modify circuits for early-product design debug; it also has the capability to create probe points to underlying metallurgy, allowing device characterization while maintaining full functionality. These techniques provide critical feedback to designers for rapid verification of proposed design changes.Current FIB technology has its limitations because of redeposition of sputtered material; this phenomena may induce vertical electrical shorts and limit the achievable aspect ratio of a milled via to 6:1. Therefore, innovative enhancements are required to provide modification capability on planar chip technology which may utilize up to five levels of metallurgy. The ability to achieve high-aspect-ratio milling is required to access underlying circuitry. Vias with aspect ratios of 10:1 are necessary in some cases.This paper reviews a gas-assisted etching (GAE) process that enhances FIB milling by volatilizing the sputtered material, examines the results obtained from utilizing the GAE process for high-aspect-ratio milling, and discusses selectivity of semiconductor materials (silicon, aluminum, tungsten and silicon dioxide).

Nanoembossed Polymer Substrates for Biomedical Surface Interaction Studies

2007 ◽  
Vol 7 (12) ◽  
pp. 4588-4594 ◽  
Author(s):  
Christopher A. Mills ◽  
Elena Martinez ◽  
Abdelhamid Errachid ◽  
Elisabeth Engel ◽  
Miriam Funes ◽  
...  
Keyword(s):  
Cell Surface ◽  
Methyl Methacrylate ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Biological Species ◽  
Poly Lactic Acid ◽  
Process Conditions ◽  
Thermoplastic Polymers ◽  
Free Standing ◽  
Poly Methyl Methacrylate

Biomedical devices are moving towards the incorporation of nanostructures to investigate the interactions of biological species with such topological surfaces found in nature. Good optical transparency and sealing properties, low fabrication cost, fast design realization times, and bio-compatibility make polymers excellent candidates for the production of surfaces containing such nanometric structures. In this work, a method for the production of nanostructures in free-standing sheets of different thermoplastic polymers is presented, with a view to using these substrates in biomedical cell-surface applications where optical microscopy techniques are required. The process conditions for the production of these structures in poly(methyl methacrylate), poly(ethylene naphthalate), poly(lactic acid), poly(styrene), and poly(ethyl ether ketone) are given. The fabrication method used is based on a modified nanoimprint lithography (NIL) technique using silicon based moulds, fabricated via reactive ion etching or focused ion beam lithography, to emboss nanostructures into the surface of the biologically compatible thermoplastic polymers. The method presented here is designed to faithfully replicate the nanostructures in the mould while maximising the mould lifetime. Examples of polymer replicas with nanostructures of different topographies are presented in poly(methyl methacrylate), including nanostructures for use in cell-surface interactions and nanostructure-containing microfluidic devices.

Sharp High-Aspect-Ratio AFM Tips Fabricated by a Combination of Deep Reactive Ion Etching and Focused Ion Beam Techniques

2010 ◽  
Vol 10 (1) ◽  
pp. 497-501 ◽  
Author(s):  
David Caballero ◽  
Guillermo Villanueva ◽  
Jose Antonio Plaza ◽  
Christopher A. Mills ◽  
Josep Samitier ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Afm Tips
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