Modeling Dielectric Response and Losses of Ferroelectrics at Microwave Frequencies

S. P. Zubko

doi:10.1080/10584580212368

Modeling Dielectric Response and Losses of Ferroelectrics at Microwave Frequencies

Integrated Ferroelectrics ◽

10.1080/10584580212368 ◽

2002 ◽

Vol 43 (1) ◽

pp. 71-80

Author(s):

S. P. Zubko

Keyword(s):

Dielectric Response ◽

Microwave Frequencies

Download Full-text

Polarization Dynamics in La5/3Sr1/3NiO4

MRS Proceedings ◽

10.1557/proc-602-35 ◽

1999 ◽

Vol 602 ◽

Author(s):

N. Hakim ◽

Z. Zhai ◽

C. Kusko ◽

P.V. Parimi ◽

S-W. Cheong ◽

...

Keyword(s):

Dielectric Loss ◽

Dielectric Response ◽

Charge Ordering ◽

Dielectric Susceptibility ◽

Dynamic Susceptibility ◽

Loss Peak ◽

Relaxation Rates ◽

Relaxation Mode ◽

Microwave Frequencies ◽

Charge Stripe

AbstractDynamic susceptibility measurements at microwave frequencies (2 – 10GHz) are a sensitive probe of charge dynamcis in La5/3Sr1/3NiO4. Below the charge ordering temperature of 240K, a dielectric loss peak due to a relaxation mode with a large dielectric susceptibility is observed, and is associated with charge stripe formation. The dielectric response for Hω∥b (Eω ⊥ b) is well represented by ε(T) = εo/(1 – iωτ(T)), with εo, ∼ 50, and τ(T) = 2 × 10−9(sec) exp(−T/37K). Parallel conductivity σ(T) contributions dominate at higher temperatures and for Hω∥c (Eω ⊥ c). The dielectric loss peak observed indicates that the charge relaxation rates lie in the GHz frequency ranges.

Download Full-text

The Dielectric Response of Hydrated PFSA Membranes at Microwave Frequencies Using Split Post Dielectric Resonators

ECS Meeting Abstracts ◽

10.1149/ma2011-01/11/542 ◽

2011 ◽

Keyword(s):

Dielectric Response ◽

Dielectric Resonators ◽

Microwave Frequencies

Download Full-text

Microwave Responce from La- and Dy- doped BiFeO3 Thin Films

MRS Proceedings ◽

10.1557/proc-0966-t05-08 ◽

2006 ◽

Vol 966 ◽

Author(s):

Peter Kr. Petrov ◽

Vaijayanti R Palkar ◽

Neil McN Alford ◽

Alexander K Tagantsev ◽

K Prashanthi ◽

...

Keyword(s):

Magnetic Field ◽

Thin Films ◽

Dielectric Response ◽

Domain Walls ◽

Structural Features ◽

Type I ◽

Microwave Frequencies ◽

Bifeo3 Thin Films ◽

Electric And Magnetic Fields ◽

Exact Origin

ABSTRACTThe dielectric response of La- and Dy- doped BiFeO3 thin films to electric- and magnetic fields was measured at microwave frequencies (up to 12GHz) in a temperature range from 25 °C to 300 °C. Interesting phenomena were observed. Significant oscillations in the C(f) characteristic which were unaffected by the electric field or by elevated temperature but which were dampened by a magnetic field. We also observed ‘N’-type I-V characteristics. A possible explanation for this mesoscopic response is the presence of structural features that cause resonance (e.g. grains, grain-boundaries, domains, domain walls etc), with a contribution strong enough to be averaged by the system. The exact origin of these features is unknown at present.

Download Full-text