DIELECTRIC RESPONSE AND ENERGY LOSS FOR AN INTERMEDIATE QUANTUM PLASMA

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-513-C7-514
Author(s):  
N. E. Frankel ◽  
K. C. Hines ◽  
R. D.B. Speirs
Keyword(s):  
Energy Loss ◽  
Dielectric Response ◽  
Quantum Plasma

scholarly journals Electron Energy Loss Spectroscopy Study on the Dielectric Response of Single H2Ti3O7 Nanotube

2009 ◽  
Vol 15 (S2) ◽  
pp. 1218-1219 ◽  
Author(s):  
J Wang ◽  
Q Li ◽  
LM Peng ◽  
M Malac
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Dielectric Response ◽  
Spectroscopy Study ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Density Functional Theory Modeling of Low-Loss Electron Energy-Loss Spectroscopy in Wurtzite III-Nitride Ternary Alloys

2016 ◽  
Vol 22 (3) ◽  
pp. 706-716 ◽  
Author(s):  
Alberto Eljarrat ◽  
Xavier Sastre ◽  
Francesca Peiró ◽  
Sónia Estradé
Keyword(s):  
Density Functional Theory ◽  
Band Structure ◽  
Energy Loss ◽  
Dielectric Response ◽  
Density Functional ◽  
Ternary Alloys ◽  
Low Loss ◽  
Plasmon Energy ◽  
Functional Theory ◽  
Electron Energy Loss

AbstractIn the present work, the dielectric response of III-nitride semiconductors is studied using density functional theory (DFT) band structure calculations. The aim of this study is to improve our understanding of the features in the low-loss electron energy-loss spectra of ternary alloys, but the results are also relevant to optical and UV spectroscopy results. In addition, the dependence of the most remarkable features with composition is tested, i.e. applying Vegard’s law to band gap and plasmon energy. For this purpose, three wurtzite ternary alloys, from the combination of binaries AlN, GaN, and InN, were simulated through a wide compositional range (i.e., AlxGa1−xN, InxAl1−xN, and InxGa1−xN, with x=[0,1]). For this DFT calculations, the standard tools found in Wien2k software were used. In order to improve the band structure description of these semiconductor compounds, the modified Becke–Johnson exchange–correlation potential was also used. Results from these calculations are presented, including band structure, density of states, and complex dielectric function for the whole compositional range. Larger, closer to experimental values, band gap energies are predicted using the novel potential, when compared with standard generalized gradient approximation. Moreover, a detailed analysis of the collective excitation features in the dielectric response reveals their compositional dependence, which sometimes departs from a linear behavior (bowing). Finally, an advantageous method for measuring the plasmon energy dependence from these calculations is explained.

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