scholarly journals Photoelectron Spectroscopy of Solids ? VUV Band Structure Studies

1990 ◽  
Vol 43 (5) ◽  
pp. 651 ◽  
Author(s):  
Robert Leckey ◽  
John Riley
Keyword(s):  
Band Structure ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Surface States ◽  
Initial State ◽  
Emission Data ◽  
Electronic Band ◽  
Radiation Sources ◽  
Valence Bands ◽  
Variable Energy

The electronic band structure of solids, including states specific to the surface, may now be explored in very great detail by photoelectron spectroscopy. Variable energy photon sources (synchroton radiation sources) coupled with advanced angle resolving electron spectrometers permit access to emission from specific points within the complete Brillouin zone. The technique of band mapping has now reached a stage where the small k-dependent changes to individual valence bands due to the effects of introduced lattice strain can be observed, for example. The relative importance of emission from surface states, as opposed to bulk band states, can be demonstated dramatically using off-normal emission data. Angle resolved constant initial state spectroscopy has recently been shown to provide details of excited state bandstructure and has clarified the involvement of surface and bulk Umklapp scattering in the photoemission process. The above capabilities of photoelectron spectroscopy are discussed, using metallic and semiconducting examples, and are related to interface problems in general.

Electronic Band Structure of C8Cs Studied by Highly-Angle-Resolved Ultraviolet Photoelectron Spectroscopy

1987 ◽  
Vol 56 (7) ◽  
pp. 2581-2589 ◽  
Author(s):  
Nihal Gunasekara ◽  
Takashi Takahashi ◽  
Fumihiko Maeda ◽  
Takasi Sagawa ◽  
Hiroyoshi Suematsu
Keyword(s):  
Band Structure ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Electronic Band

High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC

2018 ◽  
Vol 924 ◽  
pp. 239-244 ◽  
Author(s):  
Walter M. Klahold ◽  
Wolfgang J. Choyke ◽  
Robert P. Devaty
Keyword(s):  
Absorption Spectrum ◽  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Free Exciton ◽  
Electron Mass ◽  
Electronic Band ◽  
Wavelength Resolution ◽  
Primary Origin ◽  
Valence Bands

We use thick, relatively high purity 4H SiC boule material to measure the wavelength modulated absorption spectrum with improved wavelength resolution and sensitivity with respect to previous work. We observe several small 0.6 ± 0.1 meV splittings, which we attribute to electron mass anisotropy and electron-hole exchange interaction. In addition, we identify several features in the absorption spectrum as signatures of nonparabolicity in the free exciton dispersion relations, the primary origin of which is likely the nonparabolic energy dispersion of the valence bands, as revealed by published band structure calculations based on density functional theory.

scholarly journals The occupied electronic structure of ultrathin boron doped diamond

2020 ◽  
Vol 2 (3) ◽  
pp. 1358-1364
Author(s):  
A. C. Pakpour-Tabrizi ◽  
A. K. Schenk ◽  
A. J. U. Holt ◽  
S. K. Mahatha ◽  
F. Arnold ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Diamond Film ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Boron Doped Diamond ◽  
Electronic Band ◽  
Boron Doped

Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm).

scholarly journals Angle-Resolved Photoemission Study on the Band Structure of Organic Single Crystals

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 773
Author(s):  
Ke Wang ◽  
Ben Ecker ◽  
Yongli Gao
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Electronic Band Structure ◽  
Inorganic Materials ◽  
Strong Electron ◽  
Electronic Band ◽  
Valence Bands ◽  
Energy And Momentum ◽  
Photoemission Study

Angle-resolved photoemission spectroscopy (ARPES) is a vital technique, collecting data from both the energy and momentum of photoemitted electrons, and is indispensable for investigating the electronic band structure of solids. This article provides a review on ARPES studies of the electronic band structure of organic single crystals, including organic charge transfer conductors; organic semiconductors; and organo-metallic perovskites. In organic conductors and semiconductors, band dispersions are observed that are highly anisotropic. The Van der Waals crystal nature, the weak electron wavefunction overlap, as well as the strong electron-phonon coupling result in many organic crystals having indiscernible dispersion. In comparison, organo-metallic perovskite halides are characterized by strong s-p orbitals from the metal and halide at the top of the valence bands, with dispersions similar to those in inorganic materials.

scholarly journals Photoelectron spectroscopy on single crystals of organic semiconductors: experimental electronic band structure for optoelectronic properties

2020 ◽  
Vol 8 (27) ◽  
pp. 9090-9132 ◽  
Author(s):  
Yasuo Nakayama ◽  
Satoshi Kera ◽  
Nobuo Ueno
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Band Structures ◽  
Electronic Band ◽  
Hybrid Perovskite ◽  
Electronic Band Structures

Methodologies and experimental achievements for exploration into electronic band structures of organic semiconductor and hybrid perovskite single crystals are reviewed.

The electronic structure of molecular beam epitaxy grown InAs (110)

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1099-1103 ◽  
Author(s):  
D. M. Swanston ◽  
A. B. McLean ◽  
D. N. McIlroy ◽  
D. Heskett ◽  
R. Ludeke ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Reciprocal Lattice ◽  
Lone Pair ◽  
Surface States ◽  
Surface Zone ◽  
High Symmetry ◽  
Initial State ◽  
Valence Bands

The initial state dispersion of the two-dimensional electronic surface states on the nonpolar InAs(110) surface has been measured using momentum-resolved photoelectron spectroscopy with synchrotron radiation. The InAs(110) surfaces were grown using molecular beam epitaxy on a GaAs(110) substrate. The A5 surface state, which arises from the surface As lone pair, is split off from the bulk bands away from the surface zone centre and is clearly visible in the photoemission spectra at the high symmetry points ([Formula: see text], [Formula: see text] and [Formula: see text]) of the surface reciprocal lattice. Lower lying surface states overlap more strongly with the bulk bands and consequently it is harder to determine their band dispersion. To alleviate this problem we have applied nonlinear line shape analysis techniques to the valence bands. We demonstrate the viability of this approach to extract the binding energy and width of optical transitions.

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