scholarly journals Colossal Isotope Shift of the Metal-Insulator Transition Temperature in Epitaxial Thin Films of (La1-y Pry)0·7Ca0·3MnO3

1999 ◽  
Vol 52 (2) ◽  
pp. 269 ◽  
Author(s):  
O. Yu. Gorbenko ◽  
A. R. Kaul ◽  
N. A. Babushkina ◽  
L. M. Belova ◽  
B. Guettler
Keyword(s):  
Lattice Dynamics ◽  
Room Temperature ◽  
Lattice Strain ◽  
Insulator Transition ◽  
Perovskite Manganites ◽  
Epitaxial Thin Films ◽  
Raman Spectrometry ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Oxygen Isotope Exchange

A colossal shift of the maximum resistivity temperature induced by oxygen isotope exchange was registered for 60 nm thick films of the solid solution La0·35Pr0·35Ca0·3MnO3 on perovskite substrates. The magnitude of the effect depends on lattice strain resulting in the largest shift for the film on LaAlO3: the 16O sample showed a metal-insulator transition at 182 K, whereas the 18O sample was insulating down to 4·2 K, which is the highest difference ever reported for CMR manganites. An XRD and Raman spectrometry study indicates no difference in chemical composition or structure for the 18O and 16O samples at room temperature. The results are consistent with the model coupling the metal-insulator transition in the perovskite manganites to the lattice dynamics.

Metal–insulator transition induced by oxygen isotope exchange in the magnetoresistive perovskite manganites

Nature ◽  
10.1038/34380 ◽  
1998 ◽  
Vol 391 (6663) ◽  
pp. 159-161 ◽  
Author(s):  
N. A. Babushkina ◽  
L. M. Belova ◽  
O. Yu. Gorbenko ◽  
A. R. Kaul ◽  
A. A. Bosak ◽  
...  
Keyword(s):  
Oxygen Isotope ◽  
Isotope Exchange ◽  
Insulator Transition ◽  
Perovskite Manganites ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Oxygen Isotope Exchange

Strain-induced crossover of the metal-insulator transition in perovskite manganites

2005 ◽  
Vol 71 (6) ◽  
Author(s):  
Y. Ogimoto ◽  
M. Nakamura ◽  
N. Takubo ◽  
H. Tamaru ◽  
M. Izumi ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Perovskite Manganites ◽  
Metal Insulator Transition ◽  
Metal Insulator

Transport Anomalies above Room Temperature and Metal-Insulator Transition of High-Tc Oxides

1994 ◽  
pp. 145-150
Author(s):  
Masatoshi Sato ◽  
Takashi Nishikawa ◽  
Jun Takeda ◽  
Hiroshi Harashina ◽  
Shinichi Shamoto ◽  
...  
Keyword(s):  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
High Tc

scholarly journals Metal–insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

2018 ◽  
Vol 115 (38) ◽  
pp. 9515-9520 ◽  
Author(s):  
Zhaoliang Liao ◽  
Nicolas Gauquelin ◽  
Robert J. Green ◽  
Knut Müller-Caspary ◽  
Ivan Lobato ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Switching ◽  
Room Temperature ◽  
Target Material ◽  
Insulator Transition ◽  
Fine Tuning ◽  
Perovskite Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Bond Angles

In transition metal perovskites ABO3, the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

Metal–insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

2002 ◽  
Vol 81 (4) ◽  
pp. 619-621 ◽  
Author(s):  
F. Capon ◽  
P. Laffez ◽  
J.-F. Bardeau ◽  
P. Simon ◽  
P. Lacorre ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Metal insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

2012 ◽  
Vol 100 (3) ◽  
pp. 032102 ◽  
Author(s):  
Punam Silwal ◽  
Ludi Miao ◽  
Ilan Stern ◽  
Xiaolan Zhou ◽  
Jin Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spinel Nico2o4
Sign in / Sign up

Export Citation Format

Share Document